IXTA06N120P

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IXTA06N120P

MOSFET N-CH 1200V 600MA TO263

  • Fabricante
  • Mfr. Parte #IXTA06N120P
  • Paquete TO-263-3
  • Hoja de datos
  • En stock5870

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Especificaciones

Package Tube
Series Polar
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 1200 V
Current-ContinuousDrain(Id)@25°C 600mA (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 32Ohm @ 300mA, 10V
Vgs(th)(Max)@Id 4.5V @ 50µA
GateCharge(Qg)(Max)@Vgs 13.3 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 270 pF @ 25 V
PowerDissipation(Max) 42W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage TO-263AA

Descripción general

Description

The IXTA06N120P is an IGBT (Insulated Gate Bipolar Transistor) designed for high-efficiency power applications. It is part of IXYS Corporation's product line and is notable for its high voltage (1200V) and current (6A) ratings. This device combines the ease of control of a MOSFET with the high-current and low-loss characteristics of a bipolar transistor, making it suitable for a variety of applications, including inverters, motor drives, and power supplies.
Key features of the IXTA06N120P include low on-state voltage drop, fast switching capabilities, and high thermal stability, which enhance its performance in demanding environments. The device is typically housed in a TO-220 package, facilitating efficient heat dissipation.
Its robust design and versatility make the IXTA06N120P an ideal choice for engineers seeking reliable performance in power electronics.

Features

The IXTA06N120P is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for industrial applications. Key features include:
1. Voltage Rating: 1200V, suitable for high-voltage applications.
2. Current Rating: 6A, enabling efficient switching in various power electronic systems.
3. Low Conduction Losses: Optimized for reduced power dissipation, enhancing efficiency.
4. Fast Switching Speed: Allows for high-frequency operation, improving overall system performance.
5. Thermal Stability: Designed to operate reliably under high-temperature conditions, contributing to system robustness.
6. Isolation: Provides electrical isolation between gate and collector, enhancing safety.
7. Package Type: Typically available in TO-220 or similar packages, facilitating easy integration into circuits.
These features make the IXTA06N120P suitable for applications such as power inverters, motor drives, and other switching power supplies.

Package

The IXTA06N120P is packaged in a TO-220 format, which is a metal can package designed for high power applications. This package provides efficient heat dissipation and is suitable for various electronic circuits.

Pinout

The IXTA06N120P is an IGBT (Insulated Gate Bipolar Transistor) module designed for high-voltage applications. It typically features a pin count of 6. The pins and their functions are as follows:
1. Gate (G) - Controls the switching of the IGBT.
2. Collector (C) - The terminal through which the load current flows when the device is on.
3. Emitter (E) - The terminal that connects to the ground or the negative side of the load.
4. Auxiliary Collector (C1) - Used for additional connections in specific applications.
5. Auxiliary Emitter (E1) - Often used for sensing or other purposes in specialized configurations.
6. Thermal Interface - May be included for heat dissipation, depending on the package.
This device is suitable for applications such as motor drives, induction heating, and power inverters. Its high voltage rating of 1200V and current rating of 6A make it versatile for various industrial applications.

Manufacturer

The IXTA06N120P is manufactured by IXYS Corporation, which is a part of the Littelfuse family. IXYS specializes in power semiconductor solutions, including MOSFETs, diodes, and integrated circuits. The company focuses on providing high-performance products for applications in power management, renewable energy, industrial automation, and telecommunications. Established in the 1980s, IXYS has built a reputation for innovation in power devices and is known for its advanced technology in the semiconductor industry. Their products are widely used in various sectors for efficient power conversion and control.

Application

The IXTA06N120P is an IGBT (Insulated Gate Bipolar Transistor) used in various applications including industrial motor drives, renewable energy systems (like solar inverters), power supplies, and induction heating. Its high voltage and current handling capabilities make it suitable for switching applications in automotive, rail traction, and high-power converters.

Equivalent

The IXTA06N120P is a 1200V IGBT. Equivalent products include the Infineon FGA120N120A and the ON Semiconductor MFG120N120. Additionally, consider the Vishay IRG4BC30KD and the Fairchild FGA120N120B. Always verify specific application requirements to ensure compatibility.

Envío

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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