IXFP3N120

Las imágenes son solo para referencia

IXFP3N120

MOSFET N-CH 1200V 3A TO220AB

  • Fabricante
  • Mfr. Parte #IXFP3N120
  • Paquete
  • Hoja de datos
  • En stock200

100% original & Nuevo

24 horas listos para el envío

Garantía de 365 días

RFQ y Obtenga más descuentos

Especificaciones

Supplier IXYS
Package Tube
Series HiPerFET™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 1200 V
Current-ContinuousDrain(Id)@25°C 3A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 4.5Ohm @ 500mA, 10V
Vgs(th)(Max)@Id 5V @ 1.5mA
GateCharge(Qg)(Max)@Vgs 39 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1050 pF @ 25 V
PowerDissipation(Max) 200W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220-3

Descripción general

Description

IXFP3N120 is an IXYS/IXFP family N‑channel enhancement MOSFET intended for high‑voltage switching in power electronics (offline supplies, inverters, motor drives, etc.). It is designed to handle high drain‑source voltage (around 1.2 kV) with a moderate continuous current, offering relatively low on‑resistance and fast switching for efficient PWM operation. Gate drive typically requires a positive Vgs (often in the 10–12 V range for full conduction) with appropriate protection and dv/dt handling. The device is packaged in standard power packages (e.g., TO‑220/D²PAK variants) and requires proper heatsinking and thermal management to stay within its Safe Operating Area during operation. For exact numbers (Vds, Id, Rds(on), Vgs(th), Qg, package type, and max switching frequency), consult the official datasheet or distributor listing. If you can share a datasheet link or exact market version, I can pull out the precise specs.

Features

IXFP3N120 features (typical for this device):
- N-channel enhancement-mode MOSFET
- VDS ≈ 120 V
- Continuous current rating in the single-digit amperes
- Very low RDS(on) (low tens of milliohms)
- Fast switching with low gate charge
- Logic-level gate drive compatible (VGS ~ 4.5–10 V)
- Avalanche rugged with robust SOA and body diode
- Available in standard power packages (TO‑220, D²PAK, etc.)
- Operating temperature range: −55°C to +150°C
- Pb-free/RoHS compliant
Note: exact figures depend on package and revision; consult the datasheet for precise numbers.

Package

I don’t have a reliable record for "IXFP3N120." Please confirm the exact manufacturer or part number (e.g., IXYS, Infineon) or provide a datasheet link, and I’ll identify the package type.

Pinout

IXFP3N120 is a 3-pin N-channel power MOSFET (plus a metal tab/heatsink which is electrically the drain). Pin functions:
- Gate (G): control terminal that turns the MOSFET on/off.
- Drain (D): high-voltage main terminal (also the metal tab/heatsink).
- Source (S): return/current-carrying terminal.
Used as a 1200 V N-channel enhancement-mode MOSFET for high-voltage switching.

Manufacturer

The IXFP3N120 is manufactured by IXYS Corporation (now part of Littelfuse following IXYS’s acquisition). IXYS/Littelfuse is a semiconductor company that designs and manufactures power semiconductors and integrated circuits—power MOSFETs, IGBTs, diodes, and modules—serving industrial, automotive, communications, and consumer power-management markets.

Application

High‑voltage, fast‑switching power device (IGBT/MOSFET) from IXYS. Common applications:
- Switch‑mode power supplies and DC–DC converters
- Industrial motor drives and servo controllers
- Solar/wind inverters and grid‑tie converters
- Uninterruptible power supplies (UPS)
- Welding and induction‑heating power electronics

Equivalent

I can’t reliably list equivalents without the IXFP3N120’s full type (MOSFET vs IGBT) and key specs. Please provide its datasheet or at least VDS (1200 V?), continuous ID, RDS(on) or VCE(sat), gate threshold, package and switching speed. With those I can give direct equivalents (e.g., comparable 1200 V MOSFETs/IGBTs from Infineon, ST, IR, ON Semiconductor).

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

Similar