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IXFN150N10
MOSFET N-CH 100V 150A SOT-227
- Fabricante
- Mfr. Parte #IXFN150N10
- Paquete
- Hoja de datos
- En stock2622
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Especificaciones
| Supplier | IXYS |
| Package | Bulk |
| Series | HiPerFET™ |
| ProductStatus | Not For New Designs |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 150A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 12mOhm @ 75A, 10V |
| Vgs(th)(Max)@Id | 4V @ 8mA |
| GateCharge(Qg)(Max)@Vgs | 360 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 9000 pF @ 25 V |
| PowerDissipation(Max) | 520W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Chassis Mount |
| SupplierDevicePackage | SOT-227B |
Descripción general
Description
Typical basics
- Rating (approximate): around 150 A continuous current, 1000 V blocking voltage.
- Gate drive: requires ~15 V to fully turn on (not a logic-level device); gate threshold is much lower but practical drive is 15 V.
- Packaging: available in multiple packages (through-hole and surface-mount variants such as TO-220/TO-247/D2PAK equivalents).
Common uses
- Switch-mode power supplies, motor drives, inverters, DC‑DC converters, renewable energy interfaces, and UPS systems.
Design notes
- Check the datasheet for exact Vce(sat) and switching characteristics.
- Ensure adequate heat sinking and proper gate drive conditioning.
- Consider safe operating area (SOA) limits and apply protection (snubbers, proper gate resistors).
In short, IXFN150N10 is a rugged, high-power N‑channel IGBT suitable for demanding high-voltage switching applications, with typical use in energy conversion and drive circuits.
Features
- N-channel enhancement-mode MOSFET
- Voltage rating: 100 V (Vds)
- Continuous drain current: up to about 150 A (Tc‑supplied)
- Low on-resistance for high efficiency (Rds(on) specified in datasheet)
- Fast switching capability with low gate charge
- Rugged device with robust SOA and avalanche energy rating
- Integrated fast body diode for bidirectional switching
- Gate drive: fully enhanced around 10 V (gate threshold ~2–4 V; not guaranteed at logic levels)
- Available in multiple packages (e.g., through-hole and surface-mount)
- Suitable for motor control, switching power supplies, DC-DC converters, inverters
- RoHS compliant
Note: Exact numbers (Rds(on), Id, packaging, thermal limits) vary by package and lot. Check the datasheet for precise specifications and operating conditions.
Package
Pinout
Manufacturer
What kind of company: A semiconductor company that designs and manufactures power semiconductors and power-management devices — e.g., power MOSFETs, IGBTs, fast recovery diodes and related ICs for power conversion and motor/industrial applications.
Application
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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