IXFN132N50P3

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IXFN132N50P3

MOSFET N-CH 500V 112A SOT227B

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  • Mfr. Parte #IXFN132N50P3
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Especificaciones

Supplier IXYS
Package Tube
Series HiPerFET™, Polar3™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 500 V
Current-ContinuousDrain(Id)@25°C 112A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 39mOhm @ 66A, 10V
Vgs(th)(Max)@Id 5V @ 8mA
GateCharge(Qg)(Max)@Vgs 250 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 18600 pF @ 25 V
PowerDissipation(Max) 1500W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Chassis Mount
SupplierDevicePackage SOT-227B

Descripción general

Description

IXFN132N50P3 is a high‑power, N‑channel IGBT from the IXFN family. It is designed for medium‑ to high‑power switching applications and is rated for about 500 V blocking with a current class around 100–130 A. The device uses trench/field‑stop IGBT technology to provide relatively low conduction losses and fast switching, making it suitable for PWM inverters, motor drives, solar/UPS power stages, and other switching power supplies.
Key points:
- Voltage rating: roughly 500 V
- Current rating: in the 100+ A range (typical for the series)
- Switching performance: fast, with robust ruggedness and dv/dt tolerance
- Drive requirement: typically a standard gate drive in the 12–15 V range (with proper current drive and protection)
For exact electrical specs (Vce(sat), Rds(on) if applicable, switching times, SOA, and safe operating area) and recommended drive circuitry, consult the latest IXYS/IXFN132N50P3 datasheet.

Features

Key features of IXFN132N50P3:
- N-channel enhancement-mode power MOSFET
- VDS = 500 V; ID (continuous) up to 132 A
- Designed for high-speed switching and high‑dv/dt applications
- Avalanche-rated for rugged inductive-load switching
- Optimized gate drive (typical drive at 10 V for full enhancement)
- Pb-free, RoHS-compliant
- Suitable for SMPS, inverters, motor drives, and high-power switching circuits
- Package: power through-hole style with good heatsinking capability (tab to aid cooling)

Package

TO-3P power package (a through-hole metal can).

Pinout

Pin count: 3 main pins (plus a metal mounting tab). The tab is electrically the drain, so practical connections are Gate, Drain (pin + tab), and Source.
Function: IXFN132N50P3 is an N‑channel enhancement‑mode power MOSFET used for high‑voltage switching and power conversion (switching, motor drives, SMPS, etc.).

Manufacturer

Manufacturer: IXYS Corporation (brand: IXYS) — the IXFN132N50P3 is an IXYS part. IXYS was acquired by Littelfuse in 2018 and the product line is now under Littelfuse.
What kind of company: IXYS/Littelfuse is a semiconductor company specializing in power semiconductors and power-management products (power MOSFETs, IGBTs, fast recovery diodes, power modules and related components) for industrial, automotive, telecom and energy-conversion applications.

Equivalent

Common equivalents (500V, ~132A N‑channel MOSFET):
- IRFP132N50PBF (International Rectifier / Infineon)
- BSC132N50NS5 (Infineon)
Note: verify package, pinout and Rdson/vdss ratings for your board, as variants exist across vendors.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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