IXFK52N100X

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IXFK52N100X

MOSFET N-CH 1000V 52A TO264

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  • Mfr. Parte #IXFK52N100X
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  • En stock4058

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Especificaciones

Series HiPerFET™, Ultra X
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 26A, 10V
Vgs(th) (Max) @ Id 6V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 245 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 6725 pF @ 25 V
Power Dissipation (Max) 1250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-264
Package / Case TO-264-3, TO-264AA
Base Product Number IXFK52

Descripción general

Description

The IXFK52N100X is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-performance applications. It features a maximum drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 52A, making it suitable for high-voltage switching applications.
This device is characterized by low on-resistance (Rds(on)), which minimizes power loss and improves efficiency in power conversion systems. It is commonly used in applications such as DC-DC converters, power supplies, motor drives, and various industrial control systems.
The IXFK52N100X is housed in a robust package, facilitating effective heat dissipation, which is crucial for maintaining performance under high load conditions. Its fast switching capabilities enhance performance in high-frequency applications.
Overall, the IXFK52N100X is a reliable choice for designers looking for efficient power management solutions in demanding electronic circuits.

Features

The IXFK52N100X is a high-performance N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: Capable of handling a maximum drain-source voltage (V_DS) of 100V.
2. Current Rating: It can conduct a continuous drain current (I_D) of up to 52A, making it suitable for high-current applications.
3. Low R_DS(on): It offers a low on-resistance (R_DS(on)) of approximately 0.045Ω, which minimizes power losses and improves efficiency.
4. Fast Switching Speed: Designed for quick switching capabilities, beneficial for high-frequency applications.
5. Thermal Performance: Features a robust thermal management design, allowing for better heat dissipation.
6. Package Type: Typically comes in a TO-220 package, facilitating easy mounting and heat sinking.
These attributes make the IXFK52N100X ideal for use in power supplies, motor control, and other high-efficiency switching applications.

Package

The IXFK52N100X is packaged in a TO-247 format. This package type is designed for high-power applications, providing excellent thermal performance and ease of mounting.

Pinout

The IXFK52N100X is an N-channel MOSFET with a total pin count of 3. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D): This is the terminal through which the load current flows when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply, completing the circuit when the MOSFET is activated.
The IXFK52N100X is designed for high-voltage applications, featuring a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 52A, making it suitable for various power management applications.

Manufacturer

The IXFK52N100X is a power MOSFET manufactured by IXYS Corporation, a subsidiary of Littelfuse, Inc. IXYS is known for its development and production of power semiconductor devices, including MOSFETs, IGBTs, and other related products. The company primarily serves industries such as telecommunications, renewable energy, and industrial automation, focusing on high-performance, high-reliability power management solutions. With a strong emphasis on innovation, IXYS has positioned itself as a key player in the semiconductor industry, especially in high-power applications.

Application

The IXFK52N100X is a high-voltage N-channel MOSFET, commonly used in power electronics applications such as switch-mode power supplies, DC-DC converters, motor drives, and inverters. Its high current and voltage ratings make it suitable for automotive, industrial, and renewable energy systems, particularly in applications requiring efficient power management and thermal performance.

Equivalent

The IXFK52N100X is an N-channel MOSFET with a 100V rating and a 52A current capacity. Equivalent products include the Infineon IPP50R100P4, STMicroelectronics STP50NF100, and ON Semiconductor NTD50N100. Always verify specifications like RDS(on) and package type for compatibility in specific applications.

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FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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