IXFK26N120P

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IXFK26N120P

MOSFET N-CH 1200V 26A TO264AA

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Especificaciones

Package Tube
Series HiPerFET™, Polar
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 1200 V
Current-ContinuousDrain(Id)@25°C 26A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 460mOhm @ 13A, 10V
Vgs(th)(Max)@Id 6.5V @ 1mA
GateCharge(Qg)(Max)@Vgs 225 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 16000 pF @ 25 V
PowerDissipation(Max) 960W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-264AA (IXFK)

Descripción general

Description

The IXFK26N120P is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. It features a voltage rating of 1200 volts and a current rating of 26 amps, making it suitable for various high-voltage and high-current applications, such as industrial power supplies, motor drives, and DC-DC converters.
This MOSFET is characterized by its low on-state resistance (R_DS(on)), which reduces power loss and improves efficiency. It also has a fast switching speed, allowing for rapid turn-on and turn-off, which is essential in high-frequency applications. The IXFK series is known for its robust thermal performance and reliability, making it a popular choice for engineers in designing efficient power circuits.
The IXFK26N120P typically comes in a TO-220 package, facilitating easy heat dissipation. Overall, its combination of high voltage, current handling, and efficiency makes it an excellent component for modern power electronics.

Features

The IXFK26N120P is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 120V, making it suitable for high-voltage applications.
2. Current Rating: The maximum continuous drain current (I_D) is 26A, which allows for efficient power handling.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) of approximately 0.16 ohms, which minimizes power losses during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, facilitating easy drive requirements.
5. Fast Switching: It features high-speed switching capabilities, enhancing efficiency in applications like converters and inverters.
6. Package Type: Available in a TO-220 package, it provides good thermal performance and easy mounting.
These features make the IXFK26N120P suitable for a range of applications including power supplies, motor drives, and other power electronic circuits.

Package

The IXFK26N120P is encapsulated in a TO-247 package type, which is designed for high-power applications and provides efficient heat dissipation.

Pinout

The IXFK26N120P is an N-channel MOSFET manufactured by IXYS. It has a total of 4 pins. The pin functions are as follows:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate relative to the source allows the device to turn on or off.

2. Drain (D) - The drain pin is where the current flows out of the MOSFET when it is in the on state.
3. Source (S) - The source pin is the terminal through which current enters the MOSFET.
4. Body (B) - The body pin is internally connected to the source and is used for protection and stability.
This device is rated for a maximum voltage of 1200V and a continuous current of 26A, making it suitable for high-voltage applications in power electronics.

Manufacturer

The IXFK26N120P is manufactured by IXYS Corporation, which is a subsidiary of Lattice Semiconductor. IXYS is known for designing and manufacturing a range of power semiconductor devices, including MOSFETs, IGBTs, and Diodes. The company specializes in high-performance power management products used in various applications such as renewable energy, industrial automation, and electric vehicles. IXYS focuses on delivering innovative solutions that enhance energy efficiency and performance in electronic systems.

Application

The IXFK26N120P is an N-channel MOSFET primarily used in high-voltage applications such as power supplies, motor drives, and inverters. Its features make it suitable for switching and amplification in various industrial and consumer electronics, including renewable energy systems like solar inverters and electric vehicles. Additionally, it can be employed in audio amplifiers and other high-frequency applications due to its fast switching capabilities.

Equivalent

Equivalent products to the IXFK26N120P include the Infineon IKW26N120, ON Semiconductor FGH40N120, and the STMicroelectronics STP26N120. These transistors are similar in specifications such as voltage rating and current handling capability, suitable for similar applications in power electronic circuits. Always verify specific parameters to ensure compatibility.

Envío

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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