IXFK140N30P

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IXFK140N30P

MOSFET N-CH 300V 140A TO264AA

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  • Mfr. Parte #IXFK140N30P
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Especificaciones

Supplier IXYS
Package Tube
Series HiPerFET™, Polar
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 300 V
Current-ContinuousDrain(Id)@25°C 140A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 24mOhm @ 70A, 10V
Vgs(th)(Max)@Id 5V @ 8mA
GateCharge(Qg)(Max)@Vgs 185 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 14800 pF @ 25 V
PowerDissipation(Max) 1040W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-264AA (IXFK)

Descripción general

Description

IXFK140N30P is a 30-volt N-channel enhancement-mode power MOSFET from the IXFK family (IXYS/Littelfuse). It is designed for high-current switching applications and uses trench MOSFET technology to offer relatively low on-resistance, fast switching, and good ruggedness.
Key points:
- Type: N-channel power MOSFET
- Rating: Vds ≈ 30 V; continuous current capability around the high hundreds of amps (specified in the datasheet; device is intended for high-current applications)
- Features: low on-resistance, fast switching, rugged avalanche capability and good dv/dt immunity
- Packaging: available in common power packages (surface-mount such as D²PAK/TO-263 and other options; heat sinking is typical)
- Applications: switching power supplies, DC-DC converters, motor drivers, automotive and other high-current, low-voltage power electronics
Notes:
- For exact electrical numbers (Rds(on), gate charge, max peak pulsed current, thermal resistance, safe operating area) and package options, consult the IXFK140N30P datasheet.
- Temperature and bias conditions significantly affect performance; design with adequate heatsinking.

Features

IXFK140N30P is a high‑current, high‑voltage N‑channel MOSFET. Key features:
- N‑channel enhancement-mode trench MOSFET
- VDS: 300 V; ID: ~140 A
- Very low RDS(on): typical ~7–9 mΩ (max ~9–11 mΩ)
- Gate drive: threshold ~2–4 V; fully on at 10 V (low gate‑drive energy)
- Fast switching with low gate charge for efficient drive
- Avalanche ruggedness and robust SOA for protection against transients
- Wide operating temp range: approx. −55°C to +150°C
- RoHS compliant; available in common power packages (through‑hole and surface‑mount)
Applications: switch‑mode power supplies, motor drives, DC‑DC converters, and other high‑power switching needs.

Package

The IXFK140N30P is supplied in a TO-247 (I2PAK) three‑lead through‑hole power package.

Pinout

- Pin count: 3 pins (Gate, Drain, Source) plus a drain tab (the tab is connected to Drain).
- Function: N-channel enhancement-mode power MOSFET (IXFK140N30P). Used as a high-current switch; conducts between Drain and Source when Gate-Source voltage is applied, with low Rds(on). Pin order varies by package; consult the datasheet for the exact pinout.

Manufacturer

The IXFK140N30P is manufactured by IXYS Corporation (brand IXYS). IXYS is a semiconductor company—now part of Littelfuse following a 2018 acquisition—that designs and manufactures power semiconductors and integrated circuits (power MOSFETs, IGBTs, diodes, drivers and related products) for power conversion, motor control and industrial, automotive and consumer applications.

Application

IXFK140N30P is a high-voltage, high-current N-channel MOSFET. Typical applications:
- Offline switching power supplies and adapters
- DC-DC converters
- Motor drives (BLDC, PMSM, induction) and servo drives
- Inverters for solar, UPS, and grid-tied systems
- Automotive power electronics (load switches, DC-DC converters)

Equivalent

Do you mean pin‑for‑pin drop‑in replacements or functionally equivalent MOSFETs? If drop‑in, I need the package (TO‑247/TO‑220) and key specs (VDS, ID, RDS(on), VGS). Tell me which you want and I’ll list compatible parts.

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