IXFH72N30X3

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IXFH72N30X3

MOSFET N-CH 300V 72A TO247

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Especificaciones

Series HiPerFET™, Ultra X3
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V
Current - Continuous Drain (Id) @ 25°C 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 19mOhm @ 36A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs 82 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5400 pF @ 25 V
Power Dissipation (Max) 390W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247 (IXTH)
Package / Case TO-247-3
Base Product Number IXFH72

Descripción general

Description

The IXFH72N30X3 is a high-performance N-channel MOSFET manufactured by IXYS Corporation, designed for use in various power electronics applications. With a maximum drain-source voltage of 300V and a continuous drain current rating of 72A, it is well-suited for high-voltage and high-current applications such as power supplies, motor drives, and inverters.
This MOSFET boasts low on-resistance (R_DS(on)), which enhances efficiency by minimizing power loss during operation. Its fast switching capabilities also make it ideal for high-frequency applications. The IXFH72N30X3 features a TO-220 package, facilitating easy heat dissipation and integration into various circuit designs.
Specifications such as gate threshold voltage, maximum pulsed current ratings, and thermal resistance are crucial for ensuring optimal performance in specific applications. Overall, the IXFH72N30X3 is an effective choice for engineers seeking reliable and efficient power management solutions.

Features

The IXFH72N30X3 is an N-channel MOSFET designed for high-performance applications. Key features include:
- Voltage Rating: It has a maximum V_DS (drain-source voltage) of 300V, making it suitable for high-voltage applications.
- Current Rating: With a continuous drain current (I_D) of 72A, it can handle significant loads.
- R_DS(on): Low on-resistance of approximately 0.09 ohms at V_GS (gate-source voltage) of 10V, which enhances efficiency by reducing power loss.
- Gate Threshold Voltage: V_GS(th) typically ranges from 2V to 4V, allowing for easy drive with standard logic levels.
- Thermal Resistance: Features low thermal resistance, allowing for better heat dissipation and improved reliability.
- Package Type: Available in D2PAK or TO-220 packages, facilitating easy mounting and thermal management.
These attributes make the IXFH72N30X3 suitable for applications like power supplies, motor drives, and switching regulators, where efficient performance and reliability are essential.

Package

The IXFH72N30X3 is packaged in a TO-247 format, which is a type of power transistor package designed for high power applications. This package provides good thermal performance and is suitable for mounting on heat sinks.

Pinout

The IXFH72N30X3 is an N-channel MOSFET with a pin count of 8. Its primary functions include acting as a switch or amplifier in electronic circuits, particularly in power management applications. This device is designed to handle high voltage and current levels, making it suitable for use in power supplies, motor drives, and other high-efficiency applications.
The pin configuration typically includes:
1. Gate (G) - Controls the switching function.
2. Drain (D) - Connects to the load.
3. Source (S) - Connects to the ground or negative side of the circuit.
4. Body Diode - Allows current to flow in the reverse direction.
The IXFH72N30X3 is characterized by its high-speed switching capabilities and low on-resistance, enhancing performance in various electronic applications. Always refer to the specific datasheet for detailed specifications and electrical characteristics.

Manufacturer

The IXFH72N30X3 is manufactured by IXYS Corporation, which is a subsidiary of Littelfuse, Inc. IXYS specializes in power semiconductor devices, integrated circuits, and systems. The company primarily focuses on providing high-performance solutions for various applications, including power management, renewable energy, electric vehicles, and industrial systems. Founded in 1983, IXYS has built a reputation for innovation in the field of power electronics, offering products such as MOSFETs, IGBTs, diodes, and thyristors. Their technologies are widely used in sectors that require efficient power conversion and management.

Application

The IXFH72N30X3 is a high-voltage N-channel MOSFET commonly used in applications such as power supplies, DC-DC converters, motor drives, and inverters. Its features make it suitable for high-efficiency switching applications in renewable energy systems, electric vehicles, and industrial automation. Additionally, it is utilized in consumer electronics and LED drivers for efficient power management.

Equivalent

The IXFH72N30X3 is an N-channel MOSFET. Equivalent products include the IRF3205, IRF3207, and STP75NF30. Always verify specifications like Vds, Id, Rds(on), and package type before substituting to ensure compatibility with your specific application.

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