ISL9R860P2

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ISL9R860P2

DIODE GEN PURP 600V 8A TO220AC

  • Fabricante
  • Mfr. Parte #ISL9R860P2
  • Paquete TO-220-2
  • Hoja de datos
  • En stock5734

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Especificaciones

Package Tube
Series Stealth™
ProductStatus Obsolete
DiodeType Standard
Voltage-DCReverse(Vr)(Max) 600 V
Current-AverageRectified(Io) 8A
Voltage-Forward(Vf)(Max)@If 2.4 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
ReverseRecoveryTime(trr) 30 ns
Current-ReverseLeakage@Vr 100 µA @ 600 V
MountingType Through Hole
Package/Case TO-220-2
SupplierDevicePackage TO-220-2

Descripción general

Description

The ISL9R860P2 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power management applications. With a maximum drain-source voltage (VDS) of 60V and a continuous current rating of 80A, it facilitates efficient switching and control in various electronic circuits. The device features low RDS(on) resistance, which reduces power loss and improves efficiency, making it suitable for applications like DC-DC converters, motor drives, and power supply circuits.
Its robust thermal performance and fast switching capabilities allow for effective heat dissipation and rapid operation, critical for high-frequency applications. The MOSFET is typically packaged in a TO-220 format, enhancing its thermal performance by providing better heat sinking options.
Overall, the ISL9R860P2 is favored in designs that require high efficiency, reliability, and thermal management in power electronics.

Features

The ISL9R860P2 is a high-performance N-channel MOSFET designed for power management applications. Key features include:
1. Voltage Rating: 60V maximum drain-source voltage (V_DS).
2. Current Rating: Can handle up to 80A continuous drain current (I_D) under appropriate conditions.
3. R_DS(on): Low on-resistance of 9mΩ (typical), which minimizes conduction losses.
4. Gate Threshold Voltage: Optimized gate threshold between 2V to 4V, facilitating easy drive from low-voltage control circuits.
5. Fast Switching: Suitable for high-frequency applications due to its low gate charge and fast switching capabilities.
6. Package Type: Available in a TO-220 package, which allows for effective heat dissipation.
7. Applications: Ideal for use in DC-DC converters, motor drivers, and other power management circuits.
These features make the ISL9R860P2 suitable for both industrial and consumer electronics applications, enhancing efficiency and performance in various systems.

Package

The ISL9R860P2 is available in a TO-220 package type. This package features a robust design suitable for high-power applications, providing effective thermal management and ease of mounting in various electronic circuits.

Pinout

The ISL9R860P2 is a high-performance N-channel MOSFET with a pin count of 8. Its primary function is to act as a power switch in various applications, including power management and DC-DC converters.
The pins of the ISL9R860P2 are typically arranged as follows:
1. Gate - Controls the MOSFET's switching.
2. Drain - Connected to the load or output.
3. Source - Connected to the ground or return path.
4. Body Diode - Internal structure providing reverse conduction.
Additional pins may include connections for features like thermal management or additional control signals, depending on the specific package configuration. The device is designed for high-speed switching and can handle significant power levels, making it suitable for industrial and consumer electronics.

Manufacturer

The ISL9R860P2 is manufactured by Renesas Electronics Corporation. Renesas is a global semiconductor company that specializes in designing and manufacturing microcontrollers, analog, power, and system-on-chip (SoC) solutions. The company serves a wide range of industries, including automotive, industrial, and consumer electronics. Renesas focuses on providing innovative products that facilitate the development of advanced electronic systems, enhancing efficiency and performance in various applications. Their extensive portfolio includes solutions for power management, connectivity, and real-time processing, making them a key player in the semiconductor market.

Application

The ISL9R860P2 is a N-channel MOSFET used in various applications, including power management, DC-DC converters, motor control, and automotive systems. Its high efficiency and thermal performance make it suitable for switch-mode power supplies, LED drivers, and battery management systems. Additionally, it is applicable in consumer electronics and industrial automation for effective power regulation and control.

Equivalent

The ISL9R860P2 chip is a 600V, 8A N-channel MOSFET from Intersil. Equivalent products include the STP8NK60Z from STMicroelectronics, the IRF840 from Infineon, and the MTP8N60E from ON Semiconductor. Always verify specifications for compatibility in your specific application.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

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Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

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