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ISL9R3060G2
DIODE GEN PURP 600V 30A TO247-2
- Fabricante
- Mfr. Parte #ISL9R3060G2
- Paquete TO-247-2
- Hoja de datos
- En stock4502
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Especificaciones
| Package | Tube |
| Series | Stealth™ |
| ProductStatus | Active |
| DiodeType | Standard |
| Voltage-DCReverse(Vr)(Max) | 600 V |
| Current-AverageRectified(Io) | 30A |
| Voltage-Forward(Vf)(Max)@If | 2.4 V @ 30 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| ReverseRecoveryTime(trr) | 45 ns |
| Current-ReverseLeakage@Vr | 100 µA @ 600 V |
| MountingType | Through Hole |
| Package/Case | TO-247-2 |
| SupplierDevicePackage | TO-247-2 |
Descripción general
Description
The device is housed in a TO-220 package, providing excellent thermal performance and ease of mounting. It is optimized for fast switching speeds, making it ideal for high-frequency applications. Additionally, the ISL9R3060G2 is equipped with a gate threshold voltage (V_GS(th)) that allows for reliable operation in a wide range of conditions.
Overall, the ISL9R3060G2 is a versatile and efficient component in modern electronic designs, contributing to improved energy efficiency and performance in power electronic circuits.
Features
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 60V, making it suitable for medium voltage applications.
2. Current Capacity: It can handle continuous drain currents up to 30A, offering robust performance in power circuits.
3. Low R_DS(on): The device boasts a low on-resistance (R_DS(on)) of around 10.5 mΩ, which helps reduce power losses and improves efficiency.
4. Fast Switching Speed: Optimized for fast switching, it enhances performance in applications such as DC-DC converters and inverter circuits.
5. Thermal Performance: It features a TO-220 package, providing effective heat dissipation.
6. Gate Threshold Voltage (V_GS(th)): The threshold voltage is low, enabling easy driving with standard gate voltages.
7. Applications: Commonly used in power supplies, motor drives, and automotive applications.
These features make the ISL9R3060G2 a versatile and efficient choice for various electronic designs.
Package
Pinout
The pin configuration typically includes:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - Connects to the load.
3. Source (S) - Connects to ground or the negative side of the power supply.
4. Body Diode (internal) - Provides reverse current path.
The device is optimized for high efficiency and thermal performance, making it suitable for demanding applications. Always refer to the manufacturer's datasheet for detailed specifications and electrical characteristics.
Manufacturer
Application
Equivalent
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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