IS66WVE4M16EBLL-70BLI

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IS66WVE4M16EBLL-70BLI

IC PSRAM 64MBIT PARALLEL 48TFBGA

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Especificaciones

Package Tray
ProductStatus Active
MemoryType Volatile
MemoryFormat PSRAM
Technology PSRAM (Pseudo SRAM)
MemorySize 64Mb (4M x 16)
MemoryInterface Parallel
WriteCycleTime-WordPage 70ns
AccessTime 70 ns
Voltage-Supply 2.7V ~ 3.6V
OperatingTemperature -40°C ~ 85°C (TA)
MountingType Surface Mount
Package/Case 48-TFBGA

Descripción general

Description

The IS66WVE4M16EBLL-70BLI is a high-performance DDR3 SDRAM (Synchronous Dynamic Random Access Memory) chip designed for use in a variety of applications, including computers, networking devices, and embedded systems. It features a 4Gb capacity, organized as 512MB x 32 bits, and operates at a speed of 700 MHz, offering efficient data transfer and processing capabilities.
This memory chip supports a wide range of operating voltage (1.5V) and has low power consumption, making it suitable for both mobile and desktop devices. It uses a double data rate interface, allowing for improved bandwidth and performance compared to previous generations.
The IS66WVE4M16EBLL-70BLI is available in a BGA (Ball Grid Array) package, facilitating compact design and easier mounting on PCBs. Its reliability and performance make it ideal for applications requiring fast data access and storage, such as in advanced computing environments.

Features

The IS66WVE4M16EBLL-70BLI is a high-performance synchronous DRAM (Dynamic Random-Access Memory) designed for various applications, including consumer electronics and computing devices. Key features include:
1. Memory Type: DDR3 SDRAM, offering improved speed and efficiency over earlier DRAM types.
2. Density: 64 Megabits (16 Megabytes), suitable for moderate memory requirements.
3. Organization: 4 banks x 16 bits, allowing simultaneous access to multiple memory locations for enhanced performance.
4. Speed: Operates at a data rate of 700 Mbps, ensuring quick data transfer.
5. Voltage: Low operating voltage of 1.5V, which contributes to reduced power consumption.
6. Thermal/Environmental: Designed to meet industrial standards, ensuring reliability in various operating conditions.
7. Packaging: Typically available in a compact package for space-constrained applications.
Overall, the IS66WVE4M16EBLL-70BLI is an effective solution for applications requiring reliable, speedy, and energy-efficient memory operation.

Package

The IS66WVE4M16EBLL-70BLI is packaged in a 48-ball TFBGA (Thin Fine Ball Grid Array) configuration, which is designed for compact applications and efficient thermal management.

Pinout

The IS66WVE4M16EBLL-70BLI is a 4Gbit (512M x 8) DDR3 SDRAM memory device. It has a total pin count of 78 pins in a TSOPII (Thin Small Outline Package) form factor.
The key functions of the pins include:
1. Data Pins (DQ0-DQ7): These are the data input/output pins for transferring data.
2. Address Pins (A0-A14): Used to select memory locations.
3. Control Pins (CS, RAS, CAS, WE): Control signals for chip selection, row address strobe, column address strobe, and write enable.
4. Clock Pin (CLK): Synchronizes the data transfer operations.
5. Power Supply Pins (VDD, VSS): Provide power to the device.
6. Mode Register Set (MRS): Allows configuration of the device's operating conditions.
This device is designed for high-performance applications requiring fast data access and efficient power management.

Manufacturer

The IS66WVE4M16EBLL-70BLI is manufactured by ISSI (Integrated Silicon Solution, Inc.). ISSI is a semiconductor company that specializes in the design and manufacturing of high-performance memory solutions, including SRAM, DRAM, and Flash memory products. Founded in 1988 and headquartered in San Jose, California, ISSI serves various markets, including telecommunications, automotive, industrial, and consumer electronics. The company focuses on providing innovative memory solutions that meet the specific needs of its customers, contributing to the advancement of technology in multiple sectors.

Application

The IS66WVE4M16EBLL-70BLI is a 64Mb SDRAM memory chip primarily used in applications such as mobile devices, digital cameras, consumer electronics, automotive systems, and industrial equipment. Its low power consumption and high-speed performance make it ideal for portable applications requiring efficient data processing and storage.

Equivalent

The IS66WVE4M16EBLL-70BLI is a DRAM memory chip. Equivalent products include:
1. MT41K256M16HA-125 (Micron)
2. HY5PS1G831C (Hynix)
3. K4B4G1646E (Samsung)
Ensure compatibility by checking specifications such as speed, voltage, and organization before substituting.

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

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