IS66WVC4M16EALL-7010BLI

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IS66WVC4M16EALL-7010BLI

IC PSRAM 64MBIT PARALLEL 54VFBGA

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Especificaciones

Package Tray
ProductStatus Active
MemoryType Volatile
MemoryFormat PSRAM
Technology PSRAM (Pseudo SRAM)
MemorySize 64Mb (4M x 16)
MemoryInterface Parallel
WriteCycleTime-WordPage 70ns
AccessTime 70 ns
Voltage-Supply 1.7V ~ 1.95V
OperatingTemperature -40°C ~ 85°C (TC)
MountingType Surface Mount
Package/Case 54-VFBGA

Descripción general

Description

The IS66WVC4M16EALL-7010BLI is a type of DRAM (Dynamic Random-Access Memory) produced by ISSI (Integrated Silicon Solutions Inc.). This particular model features a 4 Meg x 16 configuration, which translates to 64 Megabits of memory capacity. It operates at a voltage of 3.3V and is designed for applications requiring high-speed memory access. The device is typically used in consumer electronics, automotive, and industrial applications.
This DRAM variant is optimized for performance and efficiency, providing a balance of speed and power consumption. It employs a standard asynchronous interface, making it compatible with various microcontrollers and digital signal processors. The IS66WVC4M16EALL-7010BLI also features a small footprint and is available in a compact package, allowing for easy integration into space-constrained designs. Overall, it is suitable for applications that demand reliable and high-performance memory solutions.

Features

The IS66WVC4M16EALL-7010BLI is a high-performance 4 gigabit (4G x 16) DDR3 DRAM memory device, designed for mobile applications. It features a low power consumption design, making it suitable for battery-operated devices. Key features include:
- Density: 4Gb (Gigabits) capacity with a 16-bit data width.
- Data Rate: Supports data rates up to 1600 Mbps.
- Voltage: Operates at a low voltage of 1.2V, enhancing energy efficiency.
- Package: Offered in a compact FBGA (Fine Ball Grid Array) package for space-saving on PCBs.
- Architecture: Utilizes a double-data-rate architecture, allowing for faster data transfer rates.
- Temperature Range: Supports a wide operating temperature range, making it robust for various environmental conditions.
- Latency: Low latency performance suitable for mobile and computing applications.
Overall, the IS66WVC4M16EALL-7010BLI is ideal for smartphones, tablets, and other mobile devices that require efficient and high-speed memory solutions.

Package

The IS66WVC4M16EALL-7010BLI is packaged in a TFBGA (Thin Fine Ball Grid Array) form factor. This package type features a grid of solder balls on the underside for mounting onto printed circuit boards, allowing for a compact design and efficient heat dissipation.

Pinout

The IS66WVC4M16EALL-7010BLI is a 4 Meg x 16-bit (64Mb) asynchronous SRAM with a pin count of 44.
Key functions of its pins include:
1. Address Inputs (A0-A17): Used to select the memory address.
2. Data Inputs/Outputs (DQ0-DQ15): 16-bit data bus for read and write operations.
3. Chip Enable (CE): Activates the memory chip for operation.
4. Output Enable (OE): Controls the output drivers.
5. Write Enable (WE): Dictates write operations; active low.
6. Byte Enable (BE): Allows for byte-wide operations.
7. VCC: Power supply for the chip.
8. GND: Ground connection.
This SRAM is designed for high-speed operation, making it suitable for various applications requiring fast data access.

Manufacturer

The manufacturer of the IS66WVC4M16EALL-7010BLI is ISSI (Integrated Silicon Solution, Inc.). ISSI is a semiconductor company that specializes in designing and manufacturing a range of memory products, including SRAM, DRAM, and Flash memory. Founded in 1988, the company focuses on providing high-performance memory solutions for various applications, including consumer electronics, telecommunications, automotive, and industrial markets. ISSI is known for its innovation in memory technology and is recognized for its commitment to quality and customer satisfaction.

Application

The IS66WVC4M16EALL-7010BLI is a high-density DDR3 DRAM memory chip primarily used in applications such as consumer electronics, automotive systems, networking devices, industrial automation, and telecommunications. Its features support high-speed data processing, making it suitable for devices requiring reliable and efficient memory solutions, including smartphones, laptops, servers, and embedded systems.

Equivalent

The IS66WVC4M16EALL-7010BLI is a synchronous DRAM (SDRAM) chip. Equivalent products include:
1. Micron MT46V16M16LF
2. Nanya NT5CB256M16F
3. Samsung K4B4G1646D
4. Hynix H5TQ1G83EFR
Always check the datasheets for specific pin compatibility and electrical characteristics to ensure proper functionality.

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

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