IS62WV25616BLL-55BLI

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IS62WV25616BLL-55BLI

IC SRAM 4MBIT PARALLEL 48TFBGA

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  • Mfr. Parte #IS62WV25616BLL-55BLI
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  • En stock6702

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Especificaciones

Part Status Active
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Asynchronous
Memory Size 4Mbit
Memory Organization 256K x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 55ns
Voltage - Supply 2.5V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 48-TFBGA
Supplier Device Package 48-TFBGA (6x8)
Base Product Number IS62WV25616
Access Time 55 ns

Descripción general

Description

The IS62WV25616BLL-55BLI is a high-performance, low-power CMOS static RAM (SRAM) chip from ISSI, designed for various applications such as networking, telecommunications, and consumer electronics. It has a memory capacity of 2 megabits (256K words x 8 bits) and operates at a maximum access time of 55 ns, making it suitable for high-speed data processing.
Key features include a wide voltage range (typically 2.7V to 3.6V), a low power consumption mode, and a simple interface with asynchronous access. The device supports both read and write operations with a single control signal, making it easy to integrate into various systems.
The IS62WV25616BLL-55BLI is packaged in a compact 44-pin TSOP II format, providing efficiency in space-constrained designs. Its reliability and performance make it a popular choice in applications requiring fast, volatile memory solutions.

Features

The IS62WV25616BLL-55BLI is a high-performance 16Mb (2M x 8) CMOS Static Random Access Memory (SRAM) chip. Key features include:
1. Density: 16 megabits of storage, organized as 2M x 8 bits.
2. Speed: Access time of 55 ns, allowing for fast read and write operations.
3. Low Power Consumption: Designed for low voltage operation with typical supply voltages of 2.7V to 3.6V, making it energy-efficient.
4. Asynchronous Interface: Supports asynchronous operation for easy integration.
5. Wide Operating Temperature Range: Suitable for industrial applications with a temperature range of -40°C to +85°C.
6. Easy Memory Management: Simple control signals for read, write, and chip select operations.
7. Package Options: Available in various packages, including TSOP and DIP, for flexible design implementations.
These features make the IS62WV25616BLL-55BLI suitable for applications in telecommunications, automotive, and consumer electronics where high-speed and low-power memory is essential.

Package

The IS62WV25616BLL-55BLI is packaged in a 54-pin TSOP II (Thin Small Outline Package) format. This type of package is designed for high-density memory devices, providing a compact solution for space-constrained applications.

Pinout

The IS62WV25616BLL-55BLI is a 256K x 16-bit (4Mbit) CMOS SRAM memory chip. It features a total of 44 pins. The primary functions of these pins include:
1. Data Inputs/Outputs (D0-D15): 16 data lines for reading and writing data.
2. Address Inputs (A0-A17): 18 address lines for addressing the memory locations.
3. Chip Enable (CE): Activates the chip for read or write operations.
4. Output Enable (OE): Controls the output buffer, enabling data output when low.
5. Write Enable (WE): Allows writing data to the memory when low.
6. Byte Select (BW1, BW2): Used for selecting the byte to be written or read in a 16-bit word.
7. VCC: Power supply pin.
8. GND: Ground pin.
This SRAM is designed for high-speed applications, operating with access times of 55 ns.

Manufacturer

The IS62WV25616BLL-55BLI is manufactured by ISSI (Integrated Silicon Solution, Inc.), a semiconductor company. ISSI specializes in designing and manufacturing high-performance memory products, including SRAM, DRAM, and flash memory. Founded in 1988, the company is known for its focus on providing reliable and innovative memory solutions for various applications, such as telecommunications, computing, and consumer electronics. ISSI operates globally and serves a diverse range of industries, emphasizing quality and performance in its products.

Application

The IS62WV25616BLL-55BLI is a 256K x 16 bit asynchronous SRAM used in various applications, including networking devices, telecommunications, mobile devices, consumer electronics, and automotive systems. It serves as temporary storage for data processing, buffering, and caching in systems requiring fast access times, especially in applications like embedded systems and digital signal processing.

Equivalent

The IS62WV25616BLL-55BLI is a 256Mbit (32MB) DRAM chip. Equivalent products include:
1. MT48LC16M16A2P-75
2. HY57V641620HGT-75
3. K4S641632H-UL75
Always verify compatibility with your specific application, including voltage, timing, and package type.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

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2. Tarjeta de crédito/débito

3. Transferencia bancaria

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