IS61WV51216EEBLL-10BLI

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IS61WV51216EEBLL-10BLI

IC SRAM 8MBIT PARALLEL 48TFBGA

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  • Mfr. Parte #IS61WV51216EEBLL-10BLI
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  • En stock5901

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Especificaciones

Part Status Active
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Asynchronous
Memory Size 8Mbit
Memory Organization 512K x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 10ns
Voltage - Supply 2.4V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 48-TFBGA
Supplier Device Package 48-TFBGA (6x8)
Base Product Number IS61WV51216
Access Time 10 ns

Descripción general

Description

The IS61WV51216EEBLL-10BLI is a high-performance, low-power SRAM (Static Random Access Memory) chip manufactured by ISSI (Integrated Silicon Solution, Inc.). It features a density of 512 Kbits organized as 64 Kwords x 8 bits. This memory device operates with a supply voltage range of 2.7V to 3.6V, making it suitable for battery-powered applications.
Key features include a fast access time of 10 ns, allowing for quick data retrieval, and a simple interface that supports asynchronous read and write operations. The chip also includes a low-power mode to conserve energy during idle periods, making it ideal for mobile and portable devices.
The IS61WV51216EEBLL-10BLI is packaged in a compact 48-pin TSOP (Thin Small Outline Package), facilitating easy integration into a variety of electronic systems, including consumer electronics, telecommunications, and automotive applications. Its reliability and speed make it a popular choice for designers looking for efficient memory solutions.

Features

The IS61WV51216EEBLL-10BLI is a high-performance, low-power static random-access memory (SRAM) chip featuring 512K bits (64K x 8) organization. Key features include:
1. Speed: It operates at a maximum access time of 10 ns, allowing for rapid data retrieval.
2. Voltage: The chip typically operates at a supply voltage of 2.7V to 3.6V, making it suitable for battery-operated devices.
3. Low Power Consumption: It has low active power consumption, enhancing energy efficiency in portable applications.
4. Asynchronous Operation: The device supports asynchronous read and write operations, simplifying the design process.
5. Temperature Range: It operates reliably across a commercial temperature range of 0°C to 70°C.
6. Package: Available in a compact 32-pin TSOP II package, facilitating space-constrained designs.
7. Data Retention: The chip ensures data integrity with a data retention voltage as low as 1.5V.
These features make the IS61WV51216EEBLL-10BLI suitable for various applications, including networking, automotive, and consumer electronics.

Package

The IS61WV51216EEBLL-10BLI is a 512Mb (64MB) synchronous DRAM memory chip packaged in a 54-pin TSOP-II (Thin Small Outline Package) format.

Pinout

The IS61WV51216EEBLL-10BLI is a 512K x 16-bit (1 Megabit) synchronous dynamic random-access memory (SDRAM) component. It features a total of 54 pins.
Key functions of the pins include:
- Data pins (DQ0-DQ15): 16-bit data input/output bus.
- Address pins (A0-A18): Used to select memory addresses.
- Control pins:
- CS (Chip Select): Activates the device.
- WE (Write Enable): Controls write operations.
- OE (Output Enable): Controls output data.
- RAS (Row Address Strobe) and CAS (Column Address Strobe): Used for row and column access.
- Clock pin (CLK): Synchronizes operations.
- Power pins (VDD, VSS): Provide power supply and ground connections.
- Other pins: Include the mode register set (MRS) and burst mode control.
This configuration allows for high-speed data access and efficient memory management in various applications.

Manufacturer

The manufacturer of the IS61WV51216EEBLL-10BLI is Integrated Silicon Solution, Inc. (ISSI). ISSI is a semiconductor company that specializes in the design and production of high-performance memory products, including SRAM, DRAM, and flash memory. Founded in 1988, the company focuses on providing innovative memory solutions for various applications such as telecommunications, automotive, industrial, and consumer electronics. ISSI is known for its commitment to quality and performance in the semiconductor industry.

Application

The IS61WV51216EEBLL-10BLI is a 512Mb synchronous dynamic random-access memory (SDRAM) chip commonly used in applications such as telecommunications, networking equipment, consumer electronics, automotive systems, and embedded systems. Its high-speed performance and low power consumption make it suitable for data-intensive applications, including graphics processing, digital signal processing, and high-performance computing tasks.

Equivalent

The IS61WV51216EEBLL-10BLI chip is a DRAM memory component. Equivalent products include the MT46V16M16LFBF-75 and K4S561632H-10. Always verify specifications such as voltage, speed, and organization to ensure compatibility.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

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