IS42VM16320E-6BLI

Las imágenes son solo para referencia

IS42VM16320E-6BLI

IC DRAM 512MBIT PAR 54TFBGA

  • Fabricante
  • Mfr. Parte #IS42VM16320E-6BLI
  • Paquete
  • Hoja de datos
  • En stock4808

100% original & Nuevo

24 horas listos para el envío

Garantía de 365 días

RFQ y Obtenga más descuentos

Especificaciones

Part Status Active
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - Mobile
Memory Size 512Mbit
Memory Organization 32M x 16
Memory Interface Parallel
Voltage - Supply 1.7V ~ 1.95V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 54-TFBGA
Supplier Device Package 54-TFBGA (8x8)
Base Product Number IS42VM16320
Clock Frequency 166 MHz
Access Time 5.5 ns

Descripción general

Description

The IS42VM16320E-6BLI is a 16 megabit (2M x 8) DRAM (Dynamic Random Access Memory) chip produced by Integrated Silicon Solution, Inc. (ISSI). It features a CMOS (Complementary Metal-Oxide-Semiconductor) technology, making it energy-efficient and suitable for a variety of applications.
This chip operates with a supply voltage of 3.3V and has a fast access time of 6 nanoseconds, allowing for high-speed data processing. It supports asynchronous read and write operations, which makes it compatible with various microcontroller and processor architectures.
Common applications include consumer electronics, networking devices, and automotive systems where reliable and efficient memory storage is crucial. The IS42VM16320E-6BLI is packaged in a standard 54-pin TSOP (Thin Small Outline Package), facilitating easy integration into circuit boards.
Overall, it is a versatile memory solution ideal for applications requiring moderate capacity and quick access times.

Features

The IS42VM16320E-6BLI is a 256Mb (32MB) DRAM memory chip designed for high-performance applications. Key features include:
1. Type: DDR2 SDRAM (Double Data Rate 2 Synchronous Dynamic RAM).
2. Density: 256 Megabits organized as 32Mx8.
3. Speed: Operates at a frequency of 400MHz (DDR2-400).
4. Data Rate: Offers a data transfer rate of 800 MT/s (megatransfers per second).
5. Voltage: Operates at a low voltage of 1.8V, enhancing power efficiency.
6. Packaging: Available in a standard 54-ball FBGA (Fine Ball Grid Array) package.
7. Access Time: CAS latency options typically include CL3 and CL4.
8. Burst Length: Supports burst lengths of 4 and 8.
9. Features: Includes advanced power management features like self-refresh and deep power-down modes.
This memory is suitable for applications like networking, telecommunications, and consumer electronics where high speed and efficiency are critical.

Package

The IS42VM16320E-6BLI is packaged in a 54-ball TFBGA (Thin Fine Ball Grid Array) format. This compact package type is designed for efficient space utilization and thermal performance in electronic applications.

Pinout

The IS42VM16320E-6BLI is a 1 Gigabit (128M x 8) DDR2 SDRAM memory chip. It features a total of 54 pins. The primary functions of these pins include:
1. Data Pins (DQ0-DQ7): 8 bi-directional data pins for data input/output.
2. Address Pins (A0-A12): 13 address pins used to select the memory location.
3. Control Pins:
- CS (Chip Select): Activates the chip.
- RAS (Row Address Strobe): Indicates row access.
- CAS (Column Address Strobe): Indicates column access.
- WE (Write Enable): Determines write operations.
4. Clock Pin (CLK): For synchronizing operations.
5. Power Supply Pins (VDD, VSS): Supply voltage and ground connections.
6. Other Pins: Includes a mode register set (MRS) and a self-refresh pin.
This memory is designed for high-speed data processing applications and operates with a data rate up to 800 Mbps.

Manufacturer

The IS42VM16320E-6BLI is manufactured by ISSI (Integrated Silicon Solution, Inc.), a semiconductor company based in the United States. ISSI specializes in designing and producing a wide range of memory products, including DRAM (Dynamic Random Access Memory) and NAND flash memory. The company serves various markets, including automotive, consumer electronics, telecommunications, and industrial applications. Founded in 1988, ISSI has established itself as a key player in the memory semiconductor industry, focusing on high-performance and innovative memory solutions.

Application

The IS42VM16320E-6BLI is a 16Mb DRAM (Dynamic Random Access Memory) chip commonly used in various applications such as telecommunications, networking equipment, consumer electronics, automotive systems, and industrial devices. It serves as a memory solution for storing data in digital systems, supporting functions like buffering, caching, and data processing in diverse electronic applications.

Equivalent

The IS42VM16320E-6BLI is a 2Gb DDR2 SDRAM chip. Equivalent products include the MT47H64M16HR-37, Hynix H5TQ2G63AFR, and K4T1G164QF. Always verify compatibility based on specifications like speed, voltage, and package type before substituting.

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

Similar