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IRS2003STRPBF
IC GATE DRVR HALF-BRIDGE 8SOIC
- Fabricante
- Mfr. Parte #IRS2003STRPBF
- Paquete SOIC-8
- Hoja de datos IRS2003STRPBF DataSheet
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Especificaciones
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Not For New Designs |
| DrivenConfiguration | Half-Bridge |
| ChannelType | Independent |
| NumberofDrivers | 2 |
| GateType | IGBT, N-Channel MOSFET |
| Voltage-Supply | 10V ~ 20V |
| LogicVoltage-VILVIH | 0.8V, 2.5V |
| Current-PeakOutput(SourceSink) | 290mA, 600mA |
| InputType | Inverting, Non-Inverting |
| HighSideVoltage-Max(Bootstrap) | 200 V |
| Rise/FallTime(Typ) | 70ns, 35ns |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Descripción general
Description
The prefix "IRS" often indicates a component related to power management, while the numbers "2003" could denote a series or model number. "STR" might refer to specific features or packaging, and "PBF" usually signifies "Lead-Free," indicating compliance with environmental standards like RoHS that restrict the use of certain hazardous substances in electrical and electronic equipment.
For precise details, including pin configuration, electrical specifications, and application instructions, consulting the official datasheet from the manufacturer's website or product catalog would be necessary.
Features
1. High-Side Driver: It is capable of driving N-channel MOSFETs in high-side configurations, which are common in automotive and industrial applications.
2. Floating Channel Technology: The device can operate up to 200V, which allows it to handle high-voltage applications efficiently.
3. Integrated Bootstrap Diode: It includes a bootstrap diode, simplifying the design and reducing the number of external components required.
4. Undervoltage Lockout (UVLO): This feature ensures that the MOSFET driver operates only when the supply voltage is above a certain threshold, protecting the circuit from low-voltage malfunctions.
5. Fast Switching: The IRS2003STRPBF offers fast switching speeds, which helps improve the efficiency of the power MOSFET it drives.
6. Latch Immunity and ESD Protection: The device is designed to be immune to latch-up and includes electrostatic discharge (ESD) protection, enhancing its robustness in various environments.
These features make the IRS2003STRPBF suitable for demanding applications, including automotive powertrain and motor drive systems.
Package
Pinout
1. VCC: Supply voltage for the logic circuitry within the IC.
2. HIN: Logic input for controlling the high-side MOSFET.
3. LIN: Logic input for controlling the low-side MOSFET.
4. COM: Common ground reference for the IC.
5. VB: Bootstrap supply voltage needed for high-side driver operation.
6. HO: High-side output that connects to the gate of the high-side MOSFET.
7. VS: High-side floating supply return, typically connected to the source of the high-side MOSFET.
8. LO: Low-side output that connects to the gate of the low-side MOSFET.
The IRS2003STRPBF is used in various applications for efficient control of power stages in motor drives, inverters, and similar systems requiring high-frequency and high-voltage switching.
Manufacturer
Application
Equivalent
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