IRLR3103TRPBF

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IRLR3103TRPBF

MOSFET N-CH 30V 55A DPAK

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  • Mfr. Parte #IRLR3103TRPBF
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Especificaciones

Supplier Infineon Technologies
Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 55A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 19mOhm @ 33A, 10V
Vgs(th)(Max)@Id 1V @ 250µA
GateCharge(Qg)(Max)@Vgs 50 nC @ 4.5 V
Vgs(Max) ±16V
InputCapacitance(Ciss)(Max)@Vds 1600 pF @ 25 V
PowerDissipation(Max) 107W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D-Pak

Descripción general

Description

IRLR3103TRPBF is a logic-level N-channel power MOSFET from International Rectifier (now Infineon). It’s intended for low‑voltage, high‑current switching in power electronics such as DC‑DC converters, motor drivers, and general high-side/low-side switching.
Key points:
- Pb-free, RoHS-compliant package (TRPBF indicates the lead-free packing type).
- Designed for tens of amperes of continuous current in the 30 V class (Vds ≈ 30 V).
- Very low on‑resistance (Rds(on)) when driven with a logic-level gate (typical at Vgs 4.5–10 V), enabling low conduction losses.
- Logic-level gate threshold around 1–2 V; typically fully on with standard 4.5–10 V gate drive.
- Fast switching and rugged avalanche capability, suitable for switching regulators and motor control.
For exact electrical specs (Vds, Id, Rds(on), Vgs(th), package details), refer to the official datasheet. Ensure proper heatsinking and gate protection in your design.

Features

IRLR3103TRPBF features (concise):
- N-channel enhancement-mode power MOSFET
- 30 V maximum Vds
- Logic-level gate drive for low-voltage operation
- Very low on-state resistance for efficient conduction
- High switching speed suitable for SMPS, motor drives, and load switches
- Robust device with good avalanche and short-circuit handling
- Pb-free, RoHS-compliant; Tape-and-Reel packaging (TRPBF)
- Surface-mount package with good thermal performance (DPAK-style SMT footprint)

Package

TO-252-3 (DPAK) surface-mount package; Pb-free (TRPBF).

Pinout

3 pins (TO-252/DPAK package) plus a drain-connected tab. Function: N-channel enhancement-mode power MOSFET with Gate (G), Drain (D) and Source (S) pins; the tab is also Drain.

Manufacturer

Manufacturer: Infineon Technologies AG (the IR prefix originated with International Rectifier; IRLR3103TRPBF is now produced under Infineon).
About the company: Infineon is a German semiconductor company and one of the world’s leading producers of power semiconductors, microcontrollers, security ICs, and sensors for automotive, industrial, and consumer markets.

Application

IRLR3103TRPBF is an N-channel logic-level MOSFET suitable for low-voltage switching. Common application areas include:
- DC-DC converter switching (buck/boost/SEPIC) and other power regulators
- Synchronous rectification in switching power supplies
- Motor and actuator control (DC motors, small BLDC) via low-side/high-side switches
- Load switching and power-path elements in battery-powered/portable devices
- General purpose switching where fast, efficient switching and low on-resistance are needed

Equivalent

Do you mean direct cross‑reference (same die/package/manufacturer) or functional equivalents by electrical specs (Vds, Rds(on), Id, package)? If functional substitutes, tell me required Vds, Rds(on) and package and I’ll list compatible MOSFET part numbers.

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