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IRLML6402TR
MOSFET P-CH 20V 3.7A SOT-23
- Fabricante
- Mfr. Parte #IRLML6402TR
- Paquete
- Hoja de datos IRLML6402TR DataSheet
- En stock21491
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Especificaciones
| Supplier | Infineon Technologies |
| Package | Cut Tape (CT) |
| ProductStatus | Obsolete |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 3.7A (Ta) |
| RdsOn(Max)@IdVgs | 65mOhm @ 3.7A, 4.5V |
| Vgs(th)(Max)@Id | 1.2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 12 nC @ 5 V |
| InputCapacitance(Ciss)(Max)@Vds | 633 pF @ 10 V |
| MountingType | Surface Mount |
| SupplierDevicePackage | Micro3™/SOT-23 |
Descripción general
Description
The device is housed in a compact SOT-23 package, facilitating easy integration into space-constrained designs. It is particularly favored in battery-operated devices due to its low gate threshold voltage (V_GS(th)), allowing it to turn on at lower voltages. The IRLML6402TR is commonly used in applications such as DC-DC converters, motor drivers, and power management systems. Its robust performance, combined with its compact size, makes it a popular choice among engineers for efficient circuit design.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Handling: The device can handle continuous drain current (I_D) of up to 4.2A, with a peak pulsed current of 6A.
3. Low R_DS(on): With a low on-resistance (R_DS(on)) of approximately 0.045Ω at V_GS = 10V, it ensures minimal power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 2.5V, allowing for efficient switching at lower gate voltages.
5. Package Type: It comes in a compact SOIC-8 package, providing ease of integration into PCB designs.
6. Fast Switching Speed: This MOSFET offers fast switching capabilities, making it suitable for pulse-width modulation (PWM) applications.
Overall, the IRLML6402TR is ideal for power management, load switching, and other general-purpose applications requiring high efficiency.
Package
Pinout
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Source 1 (S1) - Source terminal for the first MOSFET.
3. Drain 1 (D1) - Drain terminal for the first MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Source 2 (S2) - Source terminal for the second MOSFET.
6. Drain 2 (D2) - Drain terminal for the second MOSFET.
The device is primarily used in low-voltage applications such as switching and amplification, providing efficient control over power management in various electronic circuits.
Manufacturer
Application
Equivalent
1. BSS138
2. 2N7000
3. BS170
4. AO3400
5. SI2302
Always verify specifications, such as voltage and current ratings, to ensure compatibility with your specific application.
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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