IRLB8314PBF

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IRLB8314PBF

MOSFET N-CH 30V 171A TO220-3

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Especificaciones

Series HEXFET®
Part Status Active
Base Product Number IRLB8314
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 171A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 68A, 10V
Vgs(th) (Max) @ Id 2.2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5050 pF @ 15 V
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package TO-220-3
Packaging Tube

Descripción general

Description

IRLB8314PBF is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-efficiency switching applications. It features a maximum drain-source voltage (VDS) of 30V, a continuous drain current (ID) rating of 50A, and a low on-resistance (RDS(on)) of approximately 0.0045 ohms, making it suitable for use in power management circuits, motor control, and switch-mode power supplies. The device operates efficiently at high frequencies and is known for its rapid switching capabilities, which contribute to reduced heat generation and improved overall performance.
The "PBF" suffix indicates that it is lead-free, complying with environmental standards such as RoHS, making it a suitable choice for eco-friendly applications. Its TO-220 package allows for effective heat dissipation, facilitating use in various electronic applications. Overall, IRLB8314PBF is a reliable choice for designers looking for robust performance in compact and efficient circuitry.

Features

The IRLB8314PBF is an N-channel MOSFET designed for high-efficiency switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 62A, depending on the thermal management.
3. R_DS(on): The on-resistance is low, typically around 5.6 mΩ at V_GS = 10V, which helps minimize power loss during operation.
4. Fast Switching: The device is optimized for fast switching speeds, making it ideal for applications like synchronous rectification and power management.
5. Package: It is available in a TO-220 package, which aids in effective heat dissipation.
6. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 1V to 2V, allowing for lower gate drive requirements.
Overall, the IRLB8314PBF is suitable for applications such as DC-DC converters, motor drivers, and battery management systems.

Package

The IRLB8314PBF is packaged in a TO-220 style package. This type of package provides effective heat dissipation and is commonly used for power MOSFETs in various applications.

Pinout

The IRLB8314PBF is a N-channel MOSFET with a total of 5 pins. The pin configuration and functions are as follows:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D) - The drain pin is where the output current flows out when the MOSFET is turned on.
3. Source (S) - The source pin is the terminal through which current enters the MOSFET when it is conducting.
4. Tab/Case (not a pin) - The tab is connected to the drain and can be used for heat dissipation.
The IRLB8314PBF is designed for high-efficiency applications, featuring low on-resistance and fast switching capabilities. It is commonly used in power management and motor control applications.

Manufacturer

The IRLB8314PBF is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer. Infineon specializes in providing semiconductor solutions for various applications, including automotive, industrial power control, and consumer electronics. The company is headquartered in Neubiberg, Germany, and has a strong focus on innovation in power management and efficiency. Infineon is known for its commitment to sustainability and advancing technologies that enable energy efficiency and reduce carbon footprints.

Application

The IRLB8314PBF is an N-channel MOSFET primarily used in power management applications, including DC-DC converters, motor drivers, and power switching circuits. Its low on-resistance and high-speed switching capabilities make it suitable for battery management systems, power supplies, and automotive applications. Additionally, it's often employed in industrial control and consumer electronics for efficient power regulation.

Equivalent

The IRLB8314PBF is a N-channel MOSFET. Equivalent products include the STP16NF06, FQP30N06L, and AUIRF3205. Always check specifications such as Vds, Id, Rds(on), and package type to ensure compatibility for your application.

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