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IRL6372TRPBF
MOSFET 2N-CH 30V 8.1A 8SO
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- Mfr. Parte #IRL6372TRPBF
- Paquete
- Hoja de datos IRL6372TRPBF DataSheet
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Especificaciones
| Series | HEXFET® |
| Part Status | Last Time Buy |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8.1A |
| Rds On (Max) @ Id, Vgs | 17.9mOhm @ 8.1A, 4.5V |
| Vgs(th) (Max) @ Id | 1.1V @ 10µA |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1020pF @ 25V |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Base Product Number | IRL6372 |
Descripción general
Description
The course may explore theoretical frameworks, case studies, and current events to provide students with a comprehensive understanding of the complexities of international relations. Participants are likely to engage in critical analysis, discussions, and collaborative projects to enhance their knowledge and skills in navigating global issues.
For precise details, it would be best to consult the course syllabus or institutional resources.
Features
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 30V, which is suitable for low to medium voltage applications.
2. Current Rating: The device supports a continuous drain current (Id) of up to 62A, making it capable of handling significant load currents.
3. Low Rds(on): It offers a low on-resistance of approximately 0.025 ohms, which minimizes power losses during operation.
4. Fast Switching: The MOSFET enables rapid switching speeds, enhancing performance in high-frequency applications.
5. Thermal Performance: With an appropriate thermal resistance, it can efficiently dissipate heat, which is critical for reliable operation.
6. Package Type: It comes in a TO-220 package, facilitating easy mounting and heat dissipation.
These features make the IRL6372TRPBF ideal for various applications, including power management, motor control, and switching power supplies.
Package
Pinout
1. Gate 1 (G1) - Controls the switching of the first N-channel MOSFET.
2. Drain 1 (D1) - The drain terminal of the first MOSFET, connected to the load.
3. Source 1 (S1) - The source terminal of the first MOSFET, typically connected to ground or negative voltage.
4. Gate 2 (G2) - Controls the switching of the second N-channel MOSFET.
5. Drain 2 (D2) - The drain terminal of the second MOSFET, also connected to the load.
6. Source 2 (S2) - The source terminal of the second MOSFET, typically connected to ground or negative voltage.
This device is commonly used in power management applications, including high-speed switching and motor control.
Manufacturer
Application
Equivalent
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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