IRFU024NPBF

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IRFU024NPBF

MOSFET N-CH 55V 17A IPAK

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Especificaciones

Package Bulk,Tube
Series HEXFET®
ProductStatus Last Time Buy
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 55 V
Current-ContinuousDrain(Id)@25°C 17A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 75mOhm @ 10A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 20 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 370 pF @ 25 V
PowerDissipation(Max) 45W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage IPAK (TO-251AA)

Descripción general

Description

IRFU024NPBF is a high-performance RF transistor from Infineon Technologies, designed for applications in RF amplification and signal processing. It operates in the frequency range of 2 GHz to 2.5 GHz, making it suitable for various wireless communication systems, including cellular and satellite communications. The device features a low noise figure, high gain, and excellent linearity, which are essential for enhancing signal clarity and strength in RF applications.
The IRFU024NPBF is housed in a compact package, ensuring ease of integration into circuit designs while maintaining thermal efficiency. Its robust performance characteristics and reliability make it a preferred choice for engineers working on RF design projects. Additionally, the device is compliant with RoHS standards, reflecting a commitment to environmental sustainability.
Overall, IRFU024NPBF stands out as a versatile component in the RF component market, enabling efficient and effective communication solutions in modern electronics.

Features

The IRFU024NPBF is a N-channel MOSFET designed for efficient switching applications. Here are its key features:
1. Voltage Rating: It can handle drain-source voltages (V_DS) up to 40V, making it suitable for various applications.
2. Current Rating: The device can conduct continuous drain current (I_D) up to 24A, allowing it to manage substantial loads.
3. R_DS(on): It has a low on-resistance (R_DS(on)) of approximately 0.015 ohms, which minimizes power loss and improves efficiency.
4. Fast Switching: The MOSFET supports fast switching speeds, enhancing performance in high-frequency applications.
5. Package Type: It comes in a TO-220 package, providing effective thermal management due to its larger surface area.
6. Ideal for: Commonly used in power management, motor control, and DC-DC converters.
7. Thermal Performance: It features good thermal stability and reliability under varying load conditions.
These characteristics make the IRFU024NPBF a versatile choice for power electronics engineers.

Package

The IRFU024NPBF is packaged in a TO-220 form factor, which is a commonly used package type for power transistors. This package provides good thermal performance and is suitable for various applications requiring efficient heat dissipation.

Pinout

The IRFU024NPBF is an N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin controls the switching of the MOSFET. It receives the input voltage that turns the device on or off.
2. Drain (D): This pin is connected to the load and allows current to flow through the MOSFET when it is turned on.
3. Source (S): This pin is typically connected to ground in low-side switching applications and is the return path for the current flowing through the drain.
The IRFU024NPBF is designed for high-efficiency switching applications and can handle high current and voltage levels. Its low on-resistance and fast switching capabilities make it suitable for power management in various electronic circuits.

Manufacturer

The IRFU024NPBF is manufactured by Infineon Technologies AG, a global leader in semiconductor solutions. Infineon is based in Germany and specializes in power semiconductors, microcontrollers, sensors, and other electronic components. The company primarily serves sectors such as automotive, industrial, and consumer electronics, focusing on energy efficiency, mobility, and security solutions. Infineon’s products are widely used in applications ranging from electric vehicles to renewable energy systems, highlighting their commitment to innovation and sustainability in the semiconductor industry.

Application

The IRFU024NPBF is a N-channel MOSFET commonly used in various applications such as power management, switching power supplies, motor control, and automotive electronics. It is suitable for DC-DC converters, load switching, and general-purpose amplification in consumer electronics, industrial machinery, and renewable energy systems. Its low on-resistance and fast switching capabilities make it ideal for high-efficiency designs.

Equivalent

The IRFU024NPBF is a N-channel MOSFET. Equivalent products include the STP16NF06, FQP16N06, and BSS138. For specific applications, check datasheets for voltage, current ratings, and package types to ensure compatibility. Always verify specifications based on your requirements.

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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