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IRFS4410ZTRLPBF
MOSFET N-CH 100V 97A D2PAK
- Fabricante
- Mfr. Parte #IRFS4410ZTRLPBF
- Paquete
- Hoja de datos IRFS4410ZTRLPBF DataSheet
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Especificaciones
| Series | HEXFET® |
| Part Status | Active |
| Base Product Number | IRFS4410 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 97A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 58A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4820 pF @ 50 V |
| Power Dissipation (Max) | 230W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-3 |
| Package | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Descripción general
Description
Features
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 30V.
2. Current Rating: The continuous drain current (ID) is rated at 41A at 25°C, enabling high load capacity.
3. RDS(on): It offers a low on-resistance of approximately 6.5 mΩ, which reduces conduction losses and improves efficiency.
4. Gate Threshold Voltage: The gate-source threshold voltage (VGS(th)) is in the range of 1V to 2.5V, allowing for easy drive with low voltage.
5. Package: It comes in a compact SO-8 package, suitable for space-constrained designs.
6. Fast Switching: The device supports fast switching capabilities, making it ideal for applications in DC-DC converters, load switching, and motor control.
7. Thermal Performance: It has good thermal stability, with a maximum junction temperature of 175°C.
Overall, the IRFS4410ZTRLPBF is well-suited for applications requiring efficient power handling in compact designs.
Package
Pinout
1. Gate (G): Controls the MOSFET's on/off state; it requires a voltage to turn on the device.
2. Drain (D): The terminal through which the current flows out of the MOSFET when it is on.
3. Source (S): The terminal where the current enters the MOSFET.
In addition, it has a tab that serves as an additional thermal connection for enhanced heat dissipation. The device is designed for high efficiency and low on-resistance applications, making it suitable for power switching and other high-performance applications in automotive and industrial sectors.
Manufacturer
Application
Equivalent
1. Infineon BSC050N06NS3
2. STMicroelectronics STP45NF06
3. ON Semiconductor NTPF10N06
4. Vishay IRF4410
Always check the datasheet for specific parameters like Vds, Id, Rds(on), and package type to ensure compatibility.
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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