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IRFR5410PBF
MOSFET P-CH 100V 13A DPAK
- Fabricante
- Mfr. Parte #IRFR5410PBF
- Paquete TO-252-3
- Hoja de datos IRFR5410PBF DataSheet
- En stock6170
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Especificaciones
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Discontinued at Digi-Key |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 13A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 205mOhm @ 7.8A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 58 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 760 pF @ 25 V |
| PowerDissipation(Max) | 66W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D-Pak |
Descripción general
Description
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for various power applications.
2. Current Rating: The continuous drain current (I_D) is up to 33A, allowing it to handle significant loads.
3. Low R_DS(on): It features a low on-resistance (R_DS(on)) of around 0.045 ohms at a gate-source voltage (V_GS) of 10V, which minimizes power loss and heat generation during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, enabling efficient drive with lower control voltages.
5. Package Type: Available in a TO-220 package, it facilitates easy thermal management and mounting.
6. Fast Switching Speed: Its design is optimized for rapid turn-on and turn-off, enhancing performance in switching applications.
These features make the IRFR5410PBF suitable for a wide range of applications, including power supplies, motor drivers, and other power management systems.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D): This is the terminal through which the main current flows. It connects to the load.
3. Source (S): This terminal is connected to ground or the negative side of the circuit. It completes the circuit when the MOSFET is turned on.
4. Body (B): The body diode is inherent within the MOSFET structure, allowing current to flow from the drain to the source when the device is reverse-biased.
The IRFR5410PBF is designed for applications that require high-speed switching and low on-resistance, commonly used in power electronics, motor control, and other high-power applications.
Manufacturer
Application
Equivalent
Envío
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Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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