IRFR3711ZTRPBF

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IRFR3711ZTRPBF

IRFR3711 - 12V-300V N-CHANNEL PO

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  • Mfr. Parte #IRFR3711ZTRPBF
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Especificaciones

Supplier Rochester Electronics, LLC
Package Bulk
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 20 V
Current-ContinuousDrain(Id)@25°C 93A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 5.7mOhm @ 15A, 10V
Vgs(th)(Max)@Id 2.45V @ 250µA
GateCharge(Qg)(Max)@Vgs 27 nC @ 4.5 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 2160 pF @ 10 V
PowerDissipation(Max) 79W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D-Pak

Descripción general

Description

IRFR3711ZTRPBF is an N-channel enhancement-mode power MOSFET from Infineon/International Rectifier. It is designed as a high-efficiency switching device for power electronics.
Key points:
- Package: surface-mount, typically DPAK (TO-252), RoHS-compliant (Pb-free).
- Function: used as a switch in DC-DC converters, motor drivers, power switches, and other high-current applications.
- Features: low on-resistance and high current capability to minimize conduction losses and enable fast switching.
- Operation: gate voltage drives the device into conduction; proper gate drive, heat sinking, and layout are important for performance and reliability.
- Specs to check in the datasheet: Vds, Id, Rds(on), gate threshold, and total gate charge, as these determine drive requirements and thermal behavior.
For exact electrical values and safe operating area, consult the official datasheet and ensure your design accounts for temperature, gate drive, and parasitics.

Features

IRFR3711ZTRPBF is a high‑current, low‑voltage N‑channel power MOSFET. Key features:
- N‑channel enhancement mode MOSFET
- VDS: 30 V
- Very low RDS(on) for high-efficiency switching (typical values in low milliohms)
- High continuous drain current with rugged pulsed current capability
- Fast switching with low gate charge
- Avalanche rugged for inductive loads
- Integrated body diode
- Pb-free, RoHS compliant; available in surface-mount package variants (DPAK/D2PAK family depending on variant)
Note: refer to the exact datasheet for precise RDS(on), ID, and packaging details for your part variant.

Package

DPAK (TO-252) surface-mount package; Pb-free (TRPBF) variant.

Pinout

Pin count: 3 main pins (plus a metal mounting/tab that is electrically the drain).
Pin functions:
- Gate (G) — control terminal; applies voltage to switch the channel on/off.
- Drain (D) — main power input/output terminal; usually tied to the package tab/heatsink.
- Source (S) — current return terminal; referenced to the circuit ground or lower potential.
Note: As an N‑channel MOSFET, it has an intrinsic body diode between drain and source (conducts from source to drain when forward‑biased).

Manufacturer

Manufacturer: Infineon Technologies (original part lineage: International Rectifier).
What kind of company: Infineon is a global semiconductor manufacturer specializing in power semiconductors and power-management devices (MOSFETs, IGBTs, power ICs) for automotive, industrial, and consumer applications.

Application

IRFR3711ZTRPBF is an N-channel power MOSFET. Common application areas:
- Switching power supplies and DC-DC converters (buck/boost)
- Synchronous rectification
- Motor drives and driver circuits
- Load switching and power management (industrial/automotive)
- Solar inverters and other power-electronics applications

Equivalent

I don’t have real‑time database access. Do you want exact drop‑in replacements (same VDS, RDS(on), package) or just functionally similar MOSFETs? If exact, please confirm the key specs (VDS, RDS(on) at gate voltage, package) or allow me to look up current cross‑references.

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