IRFP4321PBF

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IRFP4321PBF

IRFP4321 - 12V-300V N-CHANNEL PO

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Especificaciones

Supplier Rochester Electronics, LLC
Package Bulk
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 150 V
Current-ContinuousDrain(Id)@25°C 78A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 15.5mOhm @ 33A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 110 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 4460 pF @ 25 V
PowerDissipation(Max) 310W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247AC

Descripción general

Description

The IRFP4321PBF is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various power applications. It boasts a low on-resistance (RDS(on)) of approximately 7.5 mΩ at 10V gate voltage, enabling efficient current conduction and reduced power losses. With a maximum drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 60A, the IRFP4321PBF is suitable for high-current applications such as power supplies, motor drives, and energy conversion systems.
The device features a fast switching speed, making it effective for applications requiring rapid on/off cycling. Its TO-220 package allows for efficient heat dissipation, enhancing reliability in demanding environments. Additionally, the IRFP4321PBF is fully RoHS compliant, ensuring it meets environmental safety standards. Overall, this MOSFET is favored for its robustness, efficiency, and versatility in power management solutions.

Features

The IRFP4321PBF is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, suitable for applications requiring high voltage handling.
2. Current Rating: The continuous drain current (I_D) is rated at 45A, supporting high current applications.
3. R_DS(on): It offers a low on-resistance of approximately 0.025 ohms, which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is between 2-4V, enabling it to be driven by lower voltage logic levels.
5. Package: It is available in a TO-220 package, facilitating easy mounting and heat dissipation.
6. Fast Switching: Designed for fast switching speeds, making it suitable for high-frequency applications.
7. Thermal Performance: Enhanced thermal management features allow for reliable performance in demanding environments.
These features make the IRFP4321PBF suitable for applications in power supplies, motor drives, and other high-efficiency systems.

Package

The IRFP4321PBF is typically packaged in a TO-220 form factor, which is a metal can package designed for power transistors and MOSFETs. This package provides good thermal performance and allows for easy heat sinking.

Pinout

The IRFP4321PBF is an N-channel MOSFET with a total of 4 pins. The pin configuration and their functions are as follows:
1. Gate (G) - This is the control pin that receives the voltage signal to turn the MOSFET on or off.
2. Drain (D) - This pin connects to the load and is where the current flows from when the MOSFET is turned on.
3. Source (S) - This pin is connected to ground or the negative side of the power supply, serving as the return path for the current flowing through the device.
4. Thermal Pad - While not a pin in the traditional sense, the thermal pad helps dissipate heat from the device, enhancing reliability and performance.
The IRFP4321PBF is typically used in high-power applications, including motor drives and power inverters, due to its high efficiency and low on-resistance.

Manufacturer

The IRFP4321PBF is manufactured by Infineon Technologies, a global semiconductor manufacturer based in Germany. Infineon specializes in developing a wide range of semiconductor solutions, including power management, automotive, industrial, and security applications. The company is known for its expertise in power semiconductors, particularly MOSFETs and IGBTs, which are widely used in various electronic devices and systems. Infineon focuses on innovation and sustainability, providing products that enhance energy efficiency and performance in diverse markets, including automotive electronics, renewable energy, and the Internet of Things (IoT).

Application

The IRFP4321PBF is an N-channel MOSFET used primarily in high-speed switching applications. Its application areas include power supplies, motor drives, inverter circuits, and audio amplifiers. It is also utilized in renewable energy systems, such as solar inverters, and in industrial equipment for efficient power management. Its high current and voltage ratings make it suitable for various demanding electronic applications.

Equivalent

The IRFP4321PBF is a N-channel MOSFET. Equivalent products include:
1. IRF3205 - Similar voltage and current ratings.
2. STP55NF06L - Comparable specifications for some applications.
3. FQP50N06L - Suitable alternative in many circuits.
4. BTV33N06 - Often used in similar applications.
Always check datasheets for exact specifications as replacements may vary in performance.

Envío

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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