IRFP2907PBF

Las imágenes son solo para referencia

IRFP2907PBF

MOSFET N-CH 75V 209A TO247AC

100% original & Nuevo

24 horas listos para el envío

Garantía de 365 días

RFQ y Obtenga más descuentos

Especificaciones

Package Tube
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 75 V
Current-ContinuousDrain(Id)@25°C 209A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 4.5mOhm @ 125A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 620 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 13000 pF @ 25 V
PowerDissipation(Max) 470W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247AC

Descripción general

Description

The IRFP2907PBF is a high-performance N-channel MOSFET designed for power applications. It features a low on-resistance (R_DS(on)), typically around 0.045 ohms, which minimizes conduction losses, making it suitable for efficient power switching. With a maximum drain-source voltage (V_DS) of 75 volts and a continuous drain current (I_D) rating of 120 amps, it can handle substantial power loads.
The device is packaged in a TO-220 form factor, facilitating heat dissipation and making it ideal for use in high-power applications such as motor drives, power supplies, and energy management systems. Its fast switching speeds and robust thermal performance allow for effective operation in demanding environments. The "PBF" suffix indicates that it is lead-free, complying with RoHS standards for environmental safety.
Overall, the IRFP2907PBF is a reliable choice for engineers looking for efficient and durable MOSFET solutions in their designs.

Features

The IRFP2907PBF is a N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: Rated for a maximum drain-source voltage (V_DS) of 75V.
2. Current Rating: Supports continuous drain current (I_D) of up to 50A (at 25°C).
3. R_DS(on): Low on-resistance of around 0.04Ω, minimizing power loss during operation.
4. Gate Threshold Voltage: Gate-to-source voltage (V_GS(th)) typically between 2V and 4V, allowing for efficient switching.
5. Fast Switching Speeds: Suitable for applications requiring quick turn-on and turn-off times.
6. Package Type: Available in TO-220 and other packages, facilitating easy heat dissipation.
7. Applications: Commonly used in power supplies, motor drives, and DC-DC converters.
These features make the IRFP2907PBF suitable for a variety of power management and control applications, providing high efficiency and reliability.

Package

The IRFP2907PBF is packaged in a TO-220 format, which is a metal package designed for high-power applications. This configuration allows for efficient heat dissipation and easier mounting to heatsinks.

Pinout

The IRFP2907PBF is a N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin controls the MOSFET's operation and is used to apply a voltage to turn the device on or off.
2. Drain (D): This pin is where the current flows out of the MOSFET when it is in the on state. The load is connected to this pin.
3. Source (S): This pin is connected to the ground or the lower potential in the circuit. Current flows into this pin when the MOSFET is conducting.
The IRFP2907PBF is designed for high-speed switching applications and can handle significant voltage and current, making it suitable for power management and motor control applications.

Manufacturer

The manufacturer of the IRFP2907PBF is Infineon Technologies AG. Infineon is a German semiconductor manufacturer known for its production of a wide range of semiconductor products, including power management, automotive, industrial, and security applications. The company focuses on innovative technologies that enable efficient energy use and enhance connectivity across various sectors, including automotive, industrial automation, and consumer electronics. Infineon plays a significant role in the global semiconductor market and is recognized for its commitment to sustainability and advanced technology solutions.

Application

The IRFP2907PBF is an N-channel MOSFET primarily used in power electronics applications. Its key areas include DC-DC converters, motor drivers, power supplies, and audio amplifiers. It is suitable for high-efficiency switching applications due to its low on-resistance and high-speed switching capabilities, making it ideal for renewable energy systems, electric vehicles, and industrial automation.

Equivalent

The IRFP2907PBF is a power MOSFET. Equivalent products include:
1. STP75NF75 - 75V, N-channel
2. FQP75N75 - 75V, N-channel
3. IPB75N75 - 75V, N-channel
4. BSS138 - lower voltage variant
Always check specific parameters like voltage, current rating, and RDS(on) for compatibility.

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

Similar