IRFP140NPBF

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IRFP140NPBF

MOSFET N-CH 100V 33A TO247AC

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Especificaciones

Package Tube
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 33A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 52mOhm @ 16A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 94 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1400 pF @ 25 V
PowerDissipation(Max) 140W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247AC

Descripción general

Description

The IRFP140NPBF is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. It belongs to the International Rectifier (now part of Infineon Technologies) product line and is commonly used in power switching, motor control, and power management systems.
Key specifications include a maximum drain-source voltage (V_DS) of 140V and a continuous drain current (I_D) of 36A at a case temperature of 25°C. The device features a low on-resistance (R_DS(on)) of approximately 0.06 ohms, allowing for efficient current conduction and minimizing power losses.
The IRFP140NPBF has a fast switching speed, making it suitable for high-frequency applications. It typically comes in a TO-220 package, which aids in heat dissipation. Additionally, the “PBF” suffix indicates that it is lead-free, complying with environmental regulations.
Overall, the IRFP140NPBF is valued for its robustness, efficiency, and versatility in various power electronics applications.

Features

The IRFP140NPBF is a high-power N-channel MOSFET designed for applications such as power switching and amplifiers. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 140V, allowing it to handle high-voltage applications.
2. Continuous Drain Current: Capable of carrying a continuous drain current (I_D) of up to 40A, making it suitable for substantial load demands.
3. Low On-Resistance: The on-resistance (R_DS(on)) is typically around 0.04 ohms at V_GS of 10V, ensuring low power loss during operation.
4. Fast Switching: The device supports high-speed switching, beneficial for efficient power management.
5. Thermal Performance: It features a high maximum junction temperature of 175°C and is packaged in a TO-220 format for effective heat dissipation.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2 to 4V, allowing for compatibility with low-voltage control signals.
These features make the IRFP140NPBF a robust choice for various power electronics applications.

Package

The IRFP140NPBF is packaged in a TO-220 type casing. This package type is designed for high power applications and provides efficient heat dissipation.

Pinout

The IRFP140NPBF is an N-channel MOSFET with a total of three pins. Here are the pin count and their functions:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate turns the device on (conducting state) or off (non-conducting state).
2. Drain (D): The drain pin is where the load is connected. In operation, current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the lower potential in the circuit. Current flows from the source to the drain when the device is activated.
The IRFP140NPBF is commonly used in power switching applications due to its high voltage and current handling capabilities.

Manufacturer

The IRFP140NPBF is manufactured by Infineon Technologies, a global leader in semiconductor solutions. Infineon specializes in designing and manufacturing a wide range of semiconductor devices, including power management, automotive, industrial, and security applications. The company focuses on innovative technologies that enhance energy efficiency, connectivity, and safety in various electronic systems. With a strong emphasis on research and development, Infineon plays a significant role in advancing the semiconductor industry and addressing the growing demand for smart, connected devices.

Application

The IRFP140NPBF is a high-voltage N-channel MOSFET widely used in power applications such as DC-DC converters, motor drives, switching power supplies, and inverters. Its high efficiency and fast switching capabilities make it suitable for applications requiring high-speed operation and thermal performance, including electric vehicles and renewable energy systems.

Equivalent

The IRFP140NPBF is an N-channel MOSFET. Equivalent products include:
1. IRF140 - Similar specifications.
2. STP140N10 - Comparable performance.
3. FDP140N10 - Alternative with similar ratings.
4. MTP140N10 - Matches voltage/current specs.
5. APT140N10 - Another suitable replacement.
Always verify specifications like Vds, Id, and Rds(on) before substitution.

Envío

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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