IRFH5020TRPBF

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IRFH5020TRPBF

MOSFET N-CH 200V 5.1A 8PQFN

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Especificaciones

Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 200 V
Current-ContinuousDrain(Id)@25°C 5.1A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 55mOhm @ 7.5A, 10V
Vgs(th)(Max)@Id 5V @ 150µA
GateCharge(Qg)(Max)@Vgs 54 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 2290 pF @ 100 V
PowerDissipation(Max) 3.6W (Ta), 8.3W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-PQFN (5x6)

Descripción general

Description

IRFH5020TRPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various electronic applications. It features low on-resistance, ensuring efficient power delivery, and is capable of handling high voltages, typically up to 60V. This MOSFET is suitable for use in switching applications, such as power supplies, motor drivers, and load switching.
Key specifications include a maximum continuous drain current, fast switching speeds, and a compact package size, usually offered in a TO-220 or similar configurations for easy integration into circuits. The IRFH5020TRPBF is known for its thermal performance, making it ideal for high-efficiency designs. Its reliability and robustness make it a popular choice among engineers for both commercial and industrial applications.
For optimal performance, proper thermal management and adherence to electrical ratings are essential during circuit design. This component is widely available and supported by various datasheets and application notes from manufacturers, aiding designers in its implementation.

Features

The IRFH5020TRPBF is a N-channel MOSFET designed for high efficiency in power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 20V, making it suitable for low-voltage applications.
2. Current Rating: It supports continuous drain current (ID) up to 50A, enabling robust performance in various load conditions.
3. Low On-Resistance: With a typical RDS(on) of around 5.5 mΩ at a gate-source voltage (VGS) of 10V, it minimizes power loss during operation.
4. Fast Switching: The MOSFET offers rapid switching capabilities, beneficial for applications like DC-DC converters and motor control systems.
5. Thermal Performance: The device is packaged in a TO-220 format, providing good thermal characteristics for effective heat dissipation.
6. Gate Threshold Voltage: It has a gate threshold voltage (VGS(th)) ranging from 1V to 3V, allowing for easy drive with low gate voltages.
These features make the IRFH5020TRPBF ideal for various power management applications.

Package

The IRFH5020TRPBF is packaged in a TO-220 form factor. This package type is commonly used for high-power MOSFETs, providing efficient heat dissipation and ease of mounting on heatsinks.

Pinout

The IRFH5020TRPBF is a N-channel MOSFET with a pin count of 5. It is designed for high-efficiency applications, particularly in power management systems.
Pin Functions:
1. Gate (G): Controls the MOSFET's switching; applies voltage to turn the device on or off.
2. Drain (D): The terminal where the output current flows out from the MOSFET.
3. Source (S): The terminal through which the current enters the MOSFET.
4. Gate-Source (G-S): This is a connection to the gate and source that helps in controlling the device's operation.
5. Drain-Source (D-S): A connection that typically indicates the main current path.
The IRFH5020TRPBF is suitable for applications requiring low on-resistance and high-speed switching.

Manufacturer

The IRFH5020TRPBF is manufactured by Infineon Technologies AG, a global leader in semiconductor solutions. Infineon specializes in producing a wide range of semiconductor products, including power semiconductors, microcontrollers, and sensors, catering to various industries such as automotive, industrial, and consumer electronics. The company focuses on developing innovative technologies that enhance energy efficiency, connectivity, and security in electronic systems. Infineon is headquartered in Neubiberg, Germany, and operates globally, providing solutions that support the growing demand for smart and sustainable technology.

Application

The IRFH5020TRPBF is an N-channel MOSFET primarily used in power management applications. Common application areas include DC-DC converters, motor control, power supplies, and load switching in consumer electronics. It is suitable for high-efficiency designs due to its low on-resistance and fast switching capabilities, making it ideal for automotive, industrial, and telecom applications.

Equivalent

The IRFH5020TRPBF is a N-channel MOSFET. Equivalent products include the AON6418, BUK7YB12-40, and STP75NF20. Always verify specifications such as voltage, current ratings, and thermal characteristics to ensure compatibility for your specific application.

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