IRFH5010TRPBF

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IRFH5010TRPBF

MOSFET N-CH 100V 13A/100A 8PQFN

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Especificaciones

Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 13A (Ta), 100A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 9mOhm @ 50A, 10V
Vgs(th)(Max)@Id 4V @ 150µA
GateCharge(Qg)(Max)@Vgs 98 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 4340 pF @ 25 V
PowerDissipation(Max) 3.6W (Ta), 250W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-PQFN (5x6)

Descripción general

Description

IRFH5010TRPBF is a high-performance N-channel MOSFET designed for efficient power management and switching applications. It features low on-resistance (RDS(on)), which minimizes power loss and heat generation, making it suitable for use in power supplies, motor drivers, and other applications requiring efficient energy conversion.
With a maximum drain-source voltage rating and high current handling capability, IRFH5010TRPBF is ideal for both low-voltage and high-voltage applications. Its robust construction allows for reliable operation in various environmental conditions. Additionally, the device offers fast switching speeds, enhancing overall circuit performance in dynamic applications.
It is typically packaged in a compact TO-220 form factor, facilitating easy integration into various electronic designs. Overall, this MOSFET is an excellent choice for engineers seeking reliable and efficient solutions in their power electronic circuits.

Features

The IRFH5010TRPBF is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 100V, making it suitable for high-voltage applications.

2. Current Rating: The device can handle a continuous drain current (ID) of up to 50A, allowing it to manage significant power loads.
3. On-Resistance: It features a low on-resistance (RDS(on)) typically around 10 mΩ, which reduces power loss and improves efficiency in switching applications.
4. Fast Switching: The IRFH5010TRPBF supports fast switching speeds, enhancing performance in high-frequency applications.
5. Package: It comes in a TO-220 package, providing good thermal performance and ease of heat dissipation.
6. Gate Threshold Voltage: With a gate threshold voltage (VGS(th)) of 2 to 4V, it operates efficiently with standard gate drive voltages.
Overall, the IRFH5010TRPBF is ideal for power management, motor control, and other high-current applications.

Package

The IRFH5010TRPBF is packaged in a TO-220 package type. This package is designed for efficient thermal performance and is commonly used for high-power applications.

Pinout

The IRFH5010TRPBF is an N-channel MOSFET with a pin count of 5. Its primary functions include acting as a switch and providing high-speed control for power applications. The pinout is as follows:
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The terminal through which current flows out.
3. Source (S) - The terminal through which current flows in.
4. Tab - Connects to the Source for better thermal performance; often connected to the heatsink.
5. Body Diode - Internal diode that allows current to flow in the reverse direction, providing protection in certain circuit configurations.
The IRFH5010TRPBF is commonly used in power management, motor control, and other high-efficiency switching applications.

Manufacturer

The IRFH5010TRPBF is manufactured by Infineon Technologies AG. Infineon is a multinational semiconductor manufacturer based in Germany, known for producing a wide range of electronic components and systems. The company focuses on power semiconductors, sensors, microcontrollers, and automotive solutions, serving various industries including automotive, industrial, and consumer electronics. Infineon is recognized for its innovation and contribution to enhancing energy efficiency and connectivity in electronic devices.

Application

The IRFH5010TRPBF is a N-channel MOSFET commonly used in applications such as power management, DC-DC converters, load switching, and motor control. Its low on-resistance and high-speed switching capabilities make it suitable for use in consumer electronics, automotive systems, and industrial power supplies.

Equivalent

The IRFH5010TRPBF is a N-channel MOSFET. Equivalent products include the AON7410, STP11NK50Z, and FDS6910. Always verify specifications like voltage rating, current rating, and RDS(on) when selecting an equivalent part.

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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