IRFD120PBF

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IRFD120PBF

MOSFET N-CH 100V 1.3A 4DIP

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Especificaciones

Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 270mOhm @ 780mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 360 pF @ 25 V
Power Dissipation (Max) 1.3W (Ta)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package 4-HVMDIP
Package / Case 4-DIP (0.300", 7.62mm)
Base Product Number IRFD120

Descripción general

Description

The IRFD120PBF is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for various applications in power management and electronic switching. It features a low on-resistance (RDS(on)), which minimizes power loss and heat generation, making it suitable for high-efficiency designs. The device typically has a voltage rating of 60V and a continuous drain current of up to 33A, allowing it to handle significant power loads.
The IRFD120PBF is often used in applications such as motor control, power supply circuits, and lighting control due to its high switching speed and efficiency. The "PBF" suffix indicates that it is RoHS compliant, meaning it is free from hazardous substances like lead, making it environmentally friendly.
Overall, the IRFD120PBF is a versatile and reliable choice for engineers looking to implement efficient power management solutions in their electronic designs.

Features

The IRFD120PBF is an N-channel MOSFET designed for high-speed and high-efficiency switching applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (Vds) of 60V.
2. Current Rating: Continuous drain current (Id) up to 33A.
3. Rds(on): Low on-resistance of approximately 0.07 ohms at a gate-source voltage (Vgs) of 10V, which helps reduce power losses.
4. Gate Threshold Voltage: Typically ranges from 2V to 4V, allowing for efficient drive with low input voltage.
5. Package Type: Available in a TO-220 package, providing effective thermal dissipation.
6. Fast Switching: Suitable for applications needing rapid switching times, enhancing overall efficiency.
7. Applications: Commonly used in power management, DC-DC converters, and motor control circuits.
This MOSFET is ideal for automotive and industrial applications due to its robustness and efficiency.

Package

The IRFD120PBF is packaged in a TO-220 package type. This type is known for its good thermal performance and is commonly used for power MOSFETs in various applications.

Pinout

The IRFD120PBF is an N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): The control terminal that receives the input signal to turn the MOSFET on or off.
2. Drain (D): The terminal through which the current flows out of the device when it is in the on state.
3. Source (S): The terminal through which the current flows into the device.
The IRFD120PBF is commonly used in applications such as power switching, motor control, and other high-efficiency power management tasks. Its specifications include a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of around 33A, making it suitable for various power applications.

Manufacturer

The IRFD120PBF is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in providing a wide range of semiconductor solutions, including power management, automotive electronics, and industrial applications. The company is known for its innovation in the field of power semiconductors and serves various sectors, including automotive, industrial, and consumer electronics. Infineon’s focus on efficiency and sustainability positions it as a key player in the global semiconductor market.

Application

The IRFD120PBF is a N-channel MOSFET primarily used in applications such as motor control, power management, switching power supplies, and DC-DC converters. Its low on-resistance and high-speed switching capabilities make it suitable for high-efficiency designs in consumer electronics, automotive systems, and industrial automation.

Equivalent

The IRFD120PBF is a N-channel MOSFET. Equivalent products include the STP16NF06, FQP30N06L, and AOD-15-60. Ensure to check specifications such as voltage, current ratings, and RDS(on) for compatibility.

Envío

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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