IRFD120

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IRFD120

MOSFET N-CH 100V 1.3A 4DIP

  • Fabricante
  • Mfr. Parte #IRFD120
  • Paquete
  • Hoja de datos
  • En stock9722

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Especificaciones

Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 270mOhm @ 780mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 360 pF @ 25 V
Power Dissipation (Max) 1.3W (Ta)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package 4-HVMDIP
Package / Case 4-DIP (0.300", 7.62mm)
Base Product Number IRFD120

Descripción general

Description

IRFD120 typically refers to an introductory course in International Relations, focusing on foundational concepts, theories, and key issues in global politics. This course aims to provide students with an understanding of how states interact, the role of international organizations, and the influence of non-state actors. Topics may include international security, diplomacy, global governance, and the impact of globalization.
Students are encouraged to analyze current events through various theoretical lenses, such as realism, liberalism, and constructivism. By the end of the course, participants should be able to critically assess international relations phenomena and engage in informed discussions about global challenges. The course often emphasizes the importance of historical context and the interplay between domestic and international factors. Overall, IRFD120 serves as a foundational stepping stone for further studies in political science and international affairs.

Features

The IRFD120 is a N-channel enhancement-mode MOSFET designed for low voltage, high-speed switching applications. Key features include:
1. Voltage Rating: Typically has a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: Can handle continuous drain currents up to 30A, making it suitable for power applications.
3. On-Resistance: Low R_DS(on) (around 0.05 Ohm), which minimizes power loss during operation.
4. Gate Threshold Voltage: V_GS(th) is generally between 1V to 2.5V, allowing for efficient control by low-voltage drive circuits.
5. Package Options: Available in various packages such as DPAK, D2PAK, and TO-220 for easy integration into designs.
6. Fast Switching: High-speed switching capabilities enhance performance in applications like DC-DC converters and motor drivers.
7. Thermal Performance: Good thermal stability and handling capabilities for demanding environments.
Overall, the IRFD120 is ideal for applications requiring reliable performance in power management and switching tasks.

Package

The IRFD120 is typically available in a TO-220 package type, which features a metal tab for heat dissipation, making it suitable for high-power applications. It can also come in other package types like TO-247, depending on the manufacturer.

Pinout

The IRFD120 is an N-channel MOSFET with a total of 3 pins. The pin count and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here allows current to flow from the drain to the source.
2. Drain (D): This is the output pin where the load connects. Current flows from the drain to the source when the device is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It serves as the reference point for the voltage applied to the gate.
The IRFD120 is commonly used in power switching applications due to its favorable characteristics, such as low on-resistance and fast switching speed.

Manufacturer

The IRFD120 is manufactured by International Rectifier, which is a company known for its power management technology. International Rectifier, now part of Infineon Technologies, specializes in producing a variety of semiconductor devices including MOSFETs, integrated circuits, and diodes. The company primarily serves sectors such as automotive, industrial, and consumer electronics, focusing on high-performance power solutions. The IRFD120 itself is a N-channel MOSFET used in applications requiring efficient switching and power management.

Application

The IRFD120 is an N-channel MOSFET primarily used in power management applications. Its key areas include motor control, switching power supplies, DC-DC converters, and general-purpose switching applications. It is also suitable for high-speed switching in automotive, industrial equipment, and consumer electronics, where efficient power handling and thermal performance are essential.

Equivalent

The IRFD120 is an N-channel MOSFET. Equivalent products include the IRF540, IRF320, and IRF250. Other alternatives are the STP16NF06, BSS136, and FQP30N06L. Always check specifications such as voltage rating, current rating, and RDS(on) to ensure compatibility.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

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2. Tarjeta de crédito/débito

3. Transferencia bancaria

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