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IRFD110
MOSFET N-CH 100V 1A 4DIP
- Fabricante
- Mfr. Parte #IRFD110
- Paquete
- Hoja de datos IRFD110 DataSheet
- En stock9353
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Especificaciones
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 540mOhm @ 600mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8.3 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 25 V |
| Power Dissipation (Max) | 1.3W (Ta) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | 4-HVMDIP |
| Package / Case | 4-DIP (0.300", 7.62mm) |
| Base Product Number | IRFD110 |
Descripción general
Description
The course aims to provide a comprehensive understanding of how countries interact, the impact of globalization, and the challenges of international cooperation. Through case studies and current events, students learn to critically assess international issues and develop analytical skills essential for careers in diplomacy, international business, and non-governmental organizations. Overall, IRFD110 serves as a foundational stepping stone for those interested in pursuing advanced studies or careers in international relations and development.
Features
1. Low On-Resistance: It offers a low R_DS(on), which minimizes power loss and improves efficiency.
2. Drain-Source Voltage: Rated for a maximum V_DS of 30V, suitable for various low-voltage applications.
3. Current Rating: Capable of handling continuous currents up to 110A, making it ideal for high-power applications.
4. Fast Switching Speed: Designed for rapid switching, which is beneficial for applications like power supplies and motor control.
5. Thermal Performance: Features a robust package that allows for effective heat dissipation, enhancing reliability.
6. Gate Threshold Voltage: Operates efficiently with a low gate threshold voltage, allowing for easy interfacing with low-voltage control circuits.
Overall, the IRFD110 is well-suited for applications such as power management, automotive, and industrial control systems.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the current enters the MOSFET. It connects to the load in a circuit.
3. Source (S): This pin is where the current exits the MOSFET and typically connects to ground in low-side switching applications.
The IRFD110 is designed for applications requiring high-speed switching and has a maximum drain-source voltage (V_DS) of 55V and a continuous drain current (I_D) of 30A. It is commonly used in power electronics, switching power supplies, and motor control applications.
Manufacturer
Application
Equivalent
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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