IRFB59N10DPBF

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IRFB59N10DPBF

MOSFET N-CH 100V 59A TO220AB

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Especificaciones

Supplier Infineon Technologies
Package Tube
Series HEXFET®
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 59A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 25mOhm @ 35.4A, 10V
Vgs(th)(Max)@Id 5.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 114 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 2450 pF @ 25 V
PowerDissipation(Max) 3.8W (Ta), 200W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Descripción general

Description

IRFB59N10DPBF is a 100 V N-channel power MOSFET in a Pb-free DPAK (TO-252) package. It’s intended for switching power electronics such as DC-DC converters, motor drivers, and inverters.
Key points:
- Vds: 100 V
- Id: ~59 A (depends on case temperature)
- Rds(on): typically around 0.09–0.14 Ω at Vgs = 10 V
- Gate: threshold ~2–4 V; fully on at ≈10 V; Vgs max ±20 V
- Package: Pb-free DPAK (DPBF suffix indicates Pb-free)
Uses: switching regulator stages, high-side/low-side switches, motor control, power supplies. For exact electrical figures, derating, and thermal data, consult the latest datasheet from Infineon/IR.

Features

Here are the key features of IRFB59N10DPBF (power MOSFET):
- N-channel enhancement-mode power MOSFET
- Vds = 100 V; Id = 59 A (continuous)
- Very low Rds(on) for high-efficiency switching (typical values per datasheet)
- Logic-level gate drive (gate threshold ~2–4 V; suitable for 10 V drive)
- Fast switching performance with low gate charge (Qg/Qgd)
- Avalanche-rated/ rugged for inductive-load protection
- Robust body diode and good dv/dt immunity
- Pb-free, RoHS-compliant (DPBF suffix)
- Suitable for SMPS, DC-DC converters, motor drives, and other high-power switching applications
Note: for exact electrical specs (Rds(on), gate charge, energy ratings, and package details), consult the official datasheet.

Package

D-PAK (TO-252) package, Pb-free (RoHS) variant.

Pinout

IRFB59N10DPBF is an N-channel enhancement-mode power MOSFET in a DPAK (TO-252) package. It has 3 pins: Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source. The drain is also connected to the metal back tab. It is used as a high-current switching transistor.

Manufacturer

- Manufacturer: Infineon Technologies AG (the IR brand originated with International Rectifier; Infineon acquired it).
- Company type: A German multinational semiconductor company that designs and manufactures power semiconductors and system solutions for automotive, industrial, and security electronics.

Application

IRFB59N10DPBF is a 100V N-channel power MOSFET for high‑speed switching. Typical applications include: switch‑mode power supplies/DC‑DC converters and VRMs, motor drives (BLDC/stepper), solar inverters and PFC stages, uninterruptible power supplies, automotive power electronics, and general appliance power switching.

Equivalent

I can’t safely list exact equivalents without key specs. Tell me Vds (drain‑source voltage), Id (continuous current), Rds(on) at Vgs, package (TO‑220/TO‑252/etc.), and switching frequency/thermal requirements. Then I’ll provide matched replacement part numbers (Vishay, ST, ON Semiconductor, etc.) concisely.

Envío

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