IRFB4610PBF

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IRFB4610PBF

MOSFET N-CH 100V 73A TO220AB

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Especificaciones

Supplier Infineon Technologies
Package Tube
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 73A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 14mOhm @ 44A, 10V
Vgs(th)(Max)@Id 4V @ 100µA
GateCharge(Qg)(Max)@Vgs 140 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 3550 pF @ 50 V
PowerDissipation(Max) 190W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Descripción general

Description

IRFB4610PBF is a Pb-free N-channel power MOSFET from International Rectifier (now Infineon). It’s a high-speed switch used in power electronics (DC-DC converters, motor drives, PFC stages, etc.).
- Type: N-channel enhancement-mode MOSFET
- Voltage/current class: ~100 V drain-source, tens of amperes (exact Id and Rds(on) vary by revision)
- On-resistance: low enough for efficient switching (Rds(on) in the tens of milliohms range in typical specs)
- Gate drive: typically enhanced at Vgs ≈ 10 V for full conduction (gate threshold around 2–4 V)
- Features: fast switching, robust avalanche energy, relatively low gate charge
- Packaging: Pb-free (PBF suffix)
Note: exact numbers (Vds, Id, Rds(on), Qg) vary by lot and package; always consult the latest datasheet or Infineon product page for precise ratings and safe operating area.

Features

IRFB4610PBF is an N-channel enhancement-mode power MOSFET. Key features typically cited:
- 100 V drain-to-source voltage
- 46 A continuous drain current
- Very low on-resistance for efficient switching (low conduction losses)
- Fast switching with low gate charge
- Avalanche/ rugged SOA capability for protection against inductive loads
- Wide operating temperature range (-55°C to +150°C)
- Pb-free (PbF) RoHS compliant
- Package: Pb-free power package (D2PAK/TO-252 family style)
Note: exact RDS(on), Qg, and current ratings are specified in the datasheet. See the datasheet for precise electrical specs and packaging details.

Package

TO-220AB (through-hole) package, Pb-free.

Pinout

IRFB4610PBF is a 3‑pin N‑channel power MOSFET (lead‑free version). Pins and functions:
- Pin 1: Gate (G) — control terminal; voltage here turns the MOSFET on/off.
- Pin 2: Drain (D) — power input; the tab/heatsink is also connected to Drain.
- Pin 3: Source (S) — return/reference terminal for load current.
(For exact pin ordering and package outline, consult the device datasheet as package style may affect lead arrangement.)

Manufacturer

Manufacturer: Originally International Rectifier (IR); the IRFB4610PBF is now sold under Infineon Technologies (IR was acquired by Infineon).
What kind of company: Infineon Technologies AG is a multinational German semiconductor manufacturer specializing in power semiconductors, microcontrollers, sensors and security ICs for automotive, industrial, power-management and IoT applications.

Application

Common applications for IRFB4610PBF include:
- Offline switch-mode power supplies (PFC and main switching)
- Motor control and drives (AC/DC)
- Solar and other renewable-energy inverters
- Uninterruptible power supplies (UPS) and energy-storage systems
- High-efficiency DC-DC converters and power bridges/inverter topologies for general power electronics

Equivalent

I don’t have live datasheet lookup. Do you mean drop-in, pin-for-pin equivalents? If so, please confirm the key specs you need matched (VDS, ID, RDS(on), package/TO-220/TO-252, switching speed, or application). With that I can list suitable equivalents.

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