IRF9952TRPBF

Las imágenes son solo para referencia

IRF9952TRPBF

MOSFET N/P-CH 30V 3.5A/2.3A 8SO

100% original & Nuevo

24 horas listos para el envío

Garantía de 365 días

RFQ y Obtenga más descuentos

Especificaciones

Series HEXFET®
Part Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 3.5A, 2.3A
Rds On (Max) @ Id, Vgs 100mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 15V
Power - Max 2W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO
Base Product Number IRF995

Descripción general

Description

The IRF9952TRPBF is a high-performance N-channel MOSFET designed for power management applications. This component features low on-resistance and high-speed switching capabilities, making it suitable for a variety of applications, including DC-DC converters, motor drives, and power inverters. It has a maximum drain-source voltage (V_DS) rating of 30V and a continuous drain current (I_D) rating of 70A, allowing it to handle significant power levels efficiently.
The IRF9952TRPBF is housed in a TO-220 package, providing robust thermal performance and ease of mounting. Its low gate threshold voltage ensures compatibility with low-voltage logic levels, facilitating smooth integration into modern electronic circuits. Additionally, the "TRPBF" designation indicates that the part is RoHS compliant, making it environmentally friendly.
Overall, the IRF9952TRPBF is ideal for engineers looking for reliable and efficient MOSFET solutions in demanding power applications.

Features

The IRF9952TRPBF is a N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 55V.
2. Current Rating: The device can handle a continuous drain current (ID) of up to 50A.
3. RDS(on): It offers a low on-resistance (RDS(on)) of about 10mΩ at VGS = 10V, which helps in reducing conduction losses.
4. Gate Threshold Voltage: The gate threshold voltage (VGS(th)) ranges from 2V to 4V, making it suitable for low-voltage applications.
5. Package Type: It comes in a TO-220 package, which aids in effective heat dissipation.
6. Fast Switching: Suitable for high-speed switching applications due to its low gate charge (QG).
7. Applications: Commonly used in power supplies, motor control, and DC-DC converters.
This MOSFET is ideal for applications requiring high performance and efficiency.

Package

The IRF9952TRPBF is packaged in a TO-220 format, which is a type of metal can package that provides good thermal performance and is suitable for power applications.

Pinout

The IRF9952TRPBF is a dual N-channel MOSFET packaged in a TO-220 form factor. It has a total of 5 pins. The pin configuration and their respective functions are as follows:
1. Gate (G1) - Controls the MOSFET's switching operation for the first channel.
2. Drain (D1) - The output for the first MOSFET channel, where the load is connected.
3. Source (S1) - The common source for the first channel, connected to ground in typical applications.
4. Gate (G2) - Controls the MOSFET's switching operation for the second channel.
5. Drain (D2) - The output for the second MOSFET channel, also connected to a load.
The IRF9952TRPBF is designed for high efficiency and can handle substantial voltage and current levels, making it suitable for various applications in power management circuits.

Manufacturer

The IRF9952TRPBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in providing a wide range of semiconductor solutions, including power management, automotive, industrial, and security applications. Infineon is known for its innovation in power electronics and is a key player in the development of technologies for energy efficiency and sustainable mobility. The IRF9952TRPBF is a power MOSFET used in various applications such as power supplies and motor control.

Application

The IRF9952TRPBF is a N-channel MOSFET commonly used in power management applications, including DC-DC converters, motor drivers, and load switching. Its high current and voltage handling capabilities make it suitable for industrial automation, automotive systems, and renewable energy systems. Additionally, it's utilized in battery management systems and power inverters, optimizing efficiency and performance in various electronic devices.

Equivalent

The IRF9952TRPBF is a MOSFET transistor. Equivalent products include the NXP BUK7YB12-40, Infineon IRLZ44N, and STMicroelectronics STP75NF75. Always verify specifications like voltage, current, and RDS(on) to ensure compatibility in your application.

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

Similar