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IRF9530NS
MOSFET P-CH 100V 14A D2PAK
- Fabricante
- Mfr. Parte #IRF9530NS
- Paquete TO-263
- Hoja de datos IRF9530NS DataSheet
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Especificaciones
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Obsolete |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 14A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 200mOhm @ 8.4A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 58 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 760 pF @ 25 V |
| PowerDissipation(Max) | 3.8W (Ta), 79W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D2PAK |
Descripción general
Description
This MOSFET has a threshold voltage (VGS(th)) between 2V and 4V, allowing it to be driven by low-voltage logic levels. The package options typically include TO-220 and DPAK, facilitating easy heat dissipation and integration into different designs.
Key parameters to consider when using the IRF9530NS include its thermal resistance, gate charge (QG), and switching times, which affect its performance in high-frequency applications. Overall, the IRF9530NS is a reliable choice for engineers looking to optimize efficiency in power electronics.
Features
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 55V, suitable for various power applications.
2. Current Rating: The device can handle a continuous drain current (ID) of up to 30A, making it suitable for high-power circuits.
3. Low RDS(on): It boasts a low on-resistance (RDS(on)) of around 0.08 ohms, which minimizes power loss and increases efficiency during operation.
4. Fast Switching Speed: It supports rapid switching, which is crucial for applications like switching power supplies and motor drivers.
5. Package Type: Packaged in a TO-220 or similar configuration, facilitating effective heat dissipation.
6. Gate Threshold Voltage: The gate-to-source threshold voltage (VGS(th)) typically ranges from 2V to 4V, allowing for easy drive with low-voltage logic.
7. Applications: Commonly used in power converters, motor control, and other high-efficiency applications.
These features make the IRF9530NS a reliable choice for designers seeking performance and efficiency in power electronics.
Package
Pinout
Pin Count and Functions:
1. Gate (G): The control pin used to turn the MOSFET on and off. A voltage applied to this pin creates an electric field that allows current to flow between the drain and source.
2. Drain (D): The terminal where the load is connected. Current flows from the drain to the source when the MOSFET is in the ON state.
3. Source (S): The terminal connected to ground or the lower potential in the circuit, allowing current to exit the MOSFET.
These three pins enable the IRF9530NS to control larger currents and voltages efficiently in various electronic applications, such as switching power supplies and motor control circuits.
Manufacturer
Application
Equivalent
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