IRF9530NS

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IRF9530NS

MOSFET P-CH 100V 14A D2PAK

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Especificaciones

Package Tube
Series HEXFET®
ProductStatus Obsolete
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 14A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 200mOhm @ 8.4A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 58 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 760 pF @ 25 V
PowerDissipation(Max) 3.8W (Ta), 79W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D2PAK

Descripción general

Description

The IRF9530NS is an N-channel MOSFET designed for power switching applications. It features a low on-resistance (RDS(on)), which minimizes power loss and improves efficiency in circuits. With a maximum drain-source voltage (VDS) of 30V and a continuous drain current (ID) of up to 62A, it is suitable for various applications, including motor control, power management, and power supplies.
This MOSFET has a threshold voltage (VGS(th)) between 2V and 4V, allowing it to be driven by low-voltage logic levels. The package options typically include TO-220 and DPAK, facilitating easy heat dissipation and integration into different designs.
Key parameters to consider when using the IRF9530NS include its thermal resistance, gate charge (QG), and switching times, which affect its performance in high-frequency applications. Overall, the IRF9530NS is a reliable choice for engineers looking to optimize efficiency in power electronics.

Features

The IRF9530NS is an N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 55V, suitable for various power applications.
2. Current Rating: The device can handle a continuous drain current (ID) of up to 30A, making it suitable for high-power circuits.
3. Low RDS(on): It boasts a low on-resistance (RDS(on)) of around 0.08 ohms, which minimizes power loss and increases efficiency during operation.
4. Fast Switching Speed: It supports rapid switching, which is crucial for applications like switching power supplies and motor drivers.
5. Package Type: Packaged in a TO-220 or similar configuration, facilitating effective heat dissipation.
6. Gate Threshold Voltage: The gate-to-source threshold voltage (VGS(th)) typically ranges from 2V to 4V, allowing for easy drive with low-voltage logic.
7. Applications: Commonly used in power converters, motor control, and other high-efficiency applications.
These features make the IRF9530NS a reliable choice for designers seeking performance and efficiency in power electronics.

Package

The IRF9530NS is typically available in a TO-220 package type, which provides good thermal performance and is suitable for applications requiring heat dissipation.

Pinout

The IRF9530NS is an N-channel MOSFET commonly used in power management applications. It typically comes in a TO-220 package, which has three pins.
Pin Count and Functions:
1. Gate (G): The control pin used to turn the MOSFET on and off. A voltage applied to this pin creates an electric field that allows current to flow between the drain and source.
2. Drain (D): The terminal where the load is connected. Current flows from the drain to the source when the MOSFET is in the ON state.
3. Source (S): The terminal connected to ground or the lower potential in the circuit, allowing current to exit the MOSFET.
These three pins enable the IRF9530NS to control larger currents and voltages efficiently in various electronic applications, such as switching power supplies and motor control circuits.

Manufacturer

The IRF9530NS is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in power semiconductors, sensors, and microcontrollers, serving various industries including automotive, industrial, and consumer electronics. The company is known for its innovations in power management, enhancing energy efficiency and performance in electronic devices. Infineon operates worldwide, focusing on advanced technology solutions that enable a sustainable future.

Application

The IRF9530NS is an N-channel MOSFET commonly used in various applications, including DC-DC converters, motor control circuits, power management systems, and automated switching devices. Its low on-resistance and high-speed switching capabilities make it suitable for efficient power handling in consumer electronics, automotive applications, and renewable energy systems. Additionally, it is utilized in power amplifiers and audio devices for signal amplification and control.

Equivalent

Equivalent products to the IRF9530NS include the IRF9530, IRF9530N, STP30NF10, and the FQP30N10. These MOSFETs share similar specifications, including voltage and current ratings, making them suitable replacements in most applications. Always verify the specific characteristics such as RDS(on), VGS(th), and package type to ensure compatibility.

Envío

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