IRF8707TRPBF

Las imágenes son solo para referencia

IRF8707TRPBF

MOSFET N-CH 30V 11A 8SO

100% original & Nuevo

24 horas listos para el envío

Garantía de 365 días

RFQ y Obtenga más descuentos

Especificaciones

Supplier Infineon Technologies
Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 11A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 11.9mOhm @ 11A, 10V
Vgs(th)(Max)@Id 2.35V @ 25µA
GateCharge(Qg)(Max)@Vgs 9.3 nC @ 4.5 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 760 pF @ 15 V
PowerDissipation(Max) 2.5W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-SO

Descripción general

Description

The IRF8707TRPBF is a high-performance N-channel MOSFET designed for various power switching applications. With a maximum drain-source voltage (V_DS) rating of 75V and a continuous drain current (I_D) of 60A, it is well-suited for power management in automotive, industrial, and consumer electronics.
This MOSFET features low on-resistance (R_DS(on)) of approximately 10 mΩ, which minimizes conduction losses and enhances efficiency. Additionally, it has a fast switching speed, making it ideal for high-frequency applications.
The device is packaged in a TO-220 format, allowing for efficient thermal management and easy mounting on heatsinks. Its gate threshold voltage (V_GS(th)) ranges from 2V to 4V, ensuring compatibility with standard logic level control voltages.
Overall, the IRF8707TRPBF is a reliable choice for engineers looking to optimize performance in power circuits, offering robust specifications and versatility in design.

Features

The IRF8707TRPBF is a N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: Drain-Source Voltage (V_DS) up to 30V, suitable for low-voltage applications.
2. Current Rating: Continuous Drain Current (I_D) of 50A, allowing for significant power handling.
3. R_DS(on): Low on-resistance, typically 11.5 mΩ at V_GS = 10V, which reduces power losses and improves efficiency.
4. Gate Threshold Voltage: V_GS(th) ranges from 2V to 4V, enabling operation with lower gate drive voltages.
5. Fast Switching Speed: Enhanced switching performance for applications such as DC-DC converters and motor drive systems.
6. Package: Available in a TO-220 package, providing good thermal performance and ease of Heat sinking.
7. Applications: Ideal for power management, automotive electronics, and other high-current switching applications.
The IRF8707TRPBF combines robustness, efficiency, and versatility, making it suitable for a variety of electronic designs.

Package

The IRF8707TRPBF is packaged in a SOIC-8 (Small Outline Integrated Circuit) package. This surface-mount package is commonly used for MOSFETs and similar devices, providing a compact footprint for efficient PCB design.

Pinout

The IRF8707TRPBF is a N-channel MOSFET with a total of 3 pins. Its primary functions include acting as a switch or amplifier in various applications, such as power management and motor control.
Here are the pin functions:
1. Gate (G): This pin controls the MOSFET's operation, allowing it to turn on or off based on the voltage applied.
2. Drain (D): The drain pin is where the current flows out of the MOSFET when it is turned on.
3. Source (S): The source pin is the terminal through which the current enters the MOSFET.
The IRF8707TRPBF is designed for high efficiency and is suitable for applications requiring low on-resistance and fast switching.

Manufacturer

The IRF8707TRPBF is manufactured by Infineon Technologies AG, a leading global semiconductor company. Infineon specializes in the development and production of a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. The company serves various industries, including automotive, industrial, and consumer electronics, focusing on energy efficiency and connectivity. Infineon’s products are integral to applications such as electric vehicles, renewable energy systems, and smart home technologies.

Application

The IRF8707TRPBF is a dual N-channel MOSFET primarily used in power management applications. Its application areas include DC-DC converters, motor control systems, power switching circuits, and load management in consumer electronics. It is also suitable for high-efficiency switching power supplies and battery management systems due to its low on-resistance and fast switching capabilities.

Equivalent

The IRF8707TRPBF is an N-channel MOSFET. Equivalent products include the Si7336ADP, BSS138, and FDS6910. Ensure to verify specifications such as voltage, current ratings, and Rds(on) when substituting, as they may vary slightly among alternatives. Always consult the datasheets for detailed characteristics.

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

Similar