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IRF7910TRPBF
MOSFET 2N-CH 12V 10A 8SO
- Fabricante
- Mfr. Parte #IRF7910TRPBF
- Paquete
- Hoja de datos IRF7910TRPBF DataSheet
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Especificaciones
| Series | HEXFET® |
| Part Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 10A |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 8A, 4.5V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1730pF @ 6V |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Base Product Number | IRF7910 |
Descripción general
Description
Key specifications include a drain-source voltage (VDS) rating of 100V, a continuous drain current (ID) of up to 50A, and a gate threshold voltage (VGS(th)) of 2-4V, facilitating easy drive from microcontrollers or logic level signals. The device is housed in a TO-220 package, which offers good thermal performance for heat dissipation.
The IRF7910TRPBF is also RoHS-compliant, aligning with environmental regulations. Its fast switching capabilities and robust performance make it a popular choice in various electronic applications, particularly where efficiency and reliability are critical.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for medium to high voltage applications.
2. Current Rating: The maximum continuous drain current (I_D) is approximately 46A, allowing it to handle significant loads.
3. R_DS(on): It has a low on-resistance (R_DS(on)) of around 0.045 ohms, which minimizes power loss during operation.
4. Fast Switching: The device is capable of fast switching speeds, enhancing efficiency in applications like DC-DC converters and motor drives.
5. TO-220 Package: The IRF7910TRPBF comes in a TO-220 package, facilitating easy heat dissipation and mounting.
6. High-speed Operation: It supports high-frequency applications with a high gate charge specification.
7. Thermal Performance: Designed for robust thermal performance, it can operate in challenging environments.
This combination of features makes the IRF7910TRPBF ideal for power management and switching applications in various electronic systems.
Package
Pinout
The pins are typically configured as follows:
1. Gate (G) - Pin for controlling the MOSFET operation.
2. Drain (D) - Pin where the load is connected; current flows out from this pin when the MOSFET is on.
3. Source (S) - Pin connected to the ground or negative side of the power supply; current flows into this pin when the MOSFET is on.
4. Body Diode - Integrated diode that conducts current in the reverse direction (not a dedicated pin).
5. Two additional pins may be used for package mounting and thermal management.
The IRF7910TRPBF is designed for high-speed switching and can handle high voltage and current, making it suitable for various power electronics applications.
Manufacturer
Application
Equivalent
Envío
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Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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