IRF7821PBF

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IRF7821PBF

MOSFET N-CH 30V 13.6A 8SO

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  • Mfr. Parte #IRF7821PBF
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Especificaciones

Series HEXFET®
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 13.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.1mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1010 pF @ 15 V
Power Dissipation (Max) 2.5W (Ta)
Operating Temperature -55°C ~ 155°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)

Descripción general

Description

The IRF7821PBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. It features a low on-resistance (R_DS(on)) of 8.5 mΩ at V_GS = 10V, enabling it to handle significant current levels with minimal power loss. The device is rated for a drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 110A, making it suitable for power management and conversion applications, such as switching power supplies and motor control.
The IRF7821PBF is housed in a TO-220 package, providing efficient thermal dissipation. Its fast switching capabilities enhance performance in high-frequency applications. Additionally, the "PBF" designation indicates it is lead-free, adhering to RoHS standards, which makes it an environmentally friendly choice for modern electronic designs. Overall, the IRF7821PBF is widely used in automotive, industrial, and consumer electronics for its robustness and efficiency.

Features

The IRF7821PBF is an N-channel MOSFET designed for various applications in power management. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 30V.
2. Current Rating: The continuous drain current (Id) is up to 78A, allowing for high-load applications.
3. RDS(on): It boasts a low on-resistance (RDS(on)) of around 10 mΩ at a gate-source voltage (Vgs) of 10V, enhancing efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) ranges from 2V to 4V, making it suitable for low-voltage drive circuits.
5. Package: It is available in a TO-220 package, facilitating heat dissipation and making it easy to mount on heatsinks.
6. Fast Switching Speed: The device supports fast switching, ideal for high-frequency applications.
7. Reliability: Features robust construction to handle thermal and electrical stress.
These attributes make the IRF7821PBF suitable for use in DC-DC converters, motor drives, and other power control circuits.

Package

The IRF7821PBF is packaged in a TO-220 casing. This type of package provides good thermal performance and is suitable for applications requiring high power handling.

Pinout

The IRF7821PBF is a N-channel MOSFET with a total of 8 pins. The pin configuration and their functions are as follows:
1. Gate (G): Controls the MOSFET's on/off state.
2. Drain (D): The terminal where the current flows out when the MOSFET is on.
3. Source (S): The terminal where the current enters when the MOSFET is conducting.
4. Body Diode (integral): Allows current to flow in the reverse direction when the MOSFET is off.
The additional pins may include various features such as the tab (which can be used for heat dissipation) and potentially other connections for specific applications, depending on the package type. The IRF7821PBF is designed for efficient switching and is typically used in power management applications.
For specific applications, refer to the datasheet for detailed information on pin configurations and electrical characteristics.

Manufacturer

The IRF7821PBF is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in power semiconductors, automotive electronics, and advanced microcontrollers. The company serves various sectors, including automotive, industrial, and communication technologies, focusing on energy efficiency and innovation. Infineon is recognized for producing high-performance components, such as MOSFETs, IGBTs, and other power management solutions, contributing significantly to advancements in electronic systems and energy management.

Application

The IRF7821PBF is an N-channel MOSFET commonly used in applications such as power management, DC-DC converters, motor control, and high-speed switching. Its features make it suitable for use in power supply circuits, automotive applications, and industrial automation systems, providing efficient switching performance and thermal stability.

Equivalent

The IRF7821PBF is an N-channel MOSFET. Equivalent products include the NXP BUK7YB12-40, Vishay SiHFD2N6, and the ON Semiconductor NTMFS6C40N. Always check the specific electrical characteristics and package types to ensure compatibility for your application.

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