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IRF7473TRPBF
MOSFET N-CH 100V 6.9A 8SO
- Fabricante
- Mfr. Parte #IRF7473TRPBF
- Paquete SOIC-8
- Hoja de datos IRF7473TRPBF DataSheet
- En stock6886
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Especificaciones
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 6.9A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 26mOhm @ 4.1A, 10V |
| Vgs(th)(Max)@Id | 5.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 61 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 3180 pF @ 25 V |
| PowerDissipation(Max) | 2.5W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SO |
Descripción general
Description
Key specifications include a maximum drain-source voltage (V_DS) of 30V, a continuous drain current (I_D) of 48A, and a threshold voltage (V_GS(th)) range of 2-4V. Its fast switching speed makes it ideal for high-frequency applications. The IRF7473 is housed in a TO-220 package, facilitating effective heat dissipation.
Additionally, it is RoHS-compliant, ensuring it meets environmental regulations. This MOSFET is commonly used in circuits requiring efficient power management and is a popular choice among engineers for reliable performance in demanding applications.
Features
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: Can handle continuous drain current (I_D) up to 55A, making it suitable for power management applications.
3. Low R_DS(on): Offers a low on-resistance (R_DS(on)) of approximately 0.04 ohms, which minimizes conduction losses and enhances efficiency.
4. Fast Switching: Capable of high-speed switching, ideal for applications in power supplies and motor drives.
5. Thermal Performance: Features a maximum junction temperature of 175°C, allowing for reliable operation in demanding environments.
6. Package Type: Available in a TO-220 package, facilitating heat dissipation and easy mounting on heat sinks.
7. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is typically in the range of 2-4V, ensuring compatibility with standard drive circuits.
These attributes make the IRF7473TRPBF suitable for various applications, including automotive, industrial, and consumer electronics.
Package
Pinout
1. Inputs (D1, D2, CLK1, CLK2, CLR1, CLR2, PRE1, PRE2): These are used for data input, clock signals, and asynchronous clear/set functions.
2. Outputs (Q1, Q2, Qn1, Qn2): These output the stored data in the flip-flops and their complements.
3. Power Supply (Vcc): Supplies power to the device.
4. Ground (GND): The reference ground for the circuit.
This integrated circuit is used for memory storage, data synchronization, and state retention in digital circuits. The IRF7473TRPBF is well-suited for applications in counters, registers, and timing circuits.
Manufacturer
Application
Equivalent
Envío
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