IRF7473TRPBF

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IRF7473TRPBF

MOSFET N-CH 100V 6.9A 8SO

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Especificaciones

Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 6.9A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 26mOhm @ 4.1A, 10V
Vgs(th)(Max)@Id 5.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 61 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 3180 pF @ 25 V
PowerDissipation(Max) 2.5W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-SO

Descripción general

Description

The IRF7473TRPBF is a N-channel MOSFET designed for power switching applications. It features low on-resistance (R_DS(on)), which enhances efficiency by reducing power losses during operation. The device is capable of handling high voltage and current levels, making it suitable for various applications, including power supplies, motor control, and automotive systems.
Key specifications include a maximum drain-source voltage (V_DS) of 30V, a continuous drain current (I_D) of 48A, and a threshold voltage (V_GS(th)) range of 2-4V. Its fast switching speed makes it ideal for high-frequency applications. The IRF7473 is housed in a TO-220 package, facilitating effective heat dissipation.
Additionally, it is RoHS-compliant, ensuring it meets environmental regulations. This MOSFET is commonly used in circuits requiring efficient power management and is a popular choice among engineers for reliable performance in demanding applications.

Features

The IRF7473TRPBF is a N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: Can handle continuous drain current (I_D) up to 55A, making it suitable for power management applications.
3. Low R_DS(on): Offers a low on-resistance (R_DS(on)) of approximately 0.04 ohms, which minimizes conduction losses and enhances efficiency.
4. Fast Switching: Capable of high-speed switching, ideal for applications in power supplies and motor drives.
5. Thermal Performance: Features a maximum junction temperature of 175°C, allowing for reliable operation in demanding environments.
6. Package Type: Available in a TO-220 package, facilitating heat dissipation and easy mounting on heat sinks.
7. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is typically in the range of 2-4V, ensuring compatibility with standard drive circuits.
These attributes make the IRF7473TRPBF suitable for various applications, including automotive, industrial, and consumer electronics.

Package

The IRF7473TRPBF is packaged in a TO-220 form factor.

Pinout

The IRF7473TRPBF is a dual D-type flip-flop with a pin count of 16. It is designed to operate with both positive and negative edge triggering, providing versatility in digital applications. The key functions of the pins are as follows:
1. Inputs (D1, D2, CLK1, CLK2, CLR1, CLR2, PRE1, PRE2): These are used for data input, clock signals, and asynchronous clear/set functions.
2. Outputs (Q1, Q2, Qn1, Qn2): These output the stored data in the flip-flops and their complements.
3. Power Supply (Vcc): Supplies power to the device.
4. Ground (GND): The reference ground for the circuit.
This integrated circuit is used for memory storage, data synchronization, and state retention in digital circuits. The IRF7473TRPBF is well-suited for applications in counters, registers, and timing circuits.

Manufacturer

The IRF7473TRPBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in microelectronics and provides a wide range of semiconductor solutions for various applications, including automotive, industrial, and consumer electronics. Infineon focuses on power management, sensor technology, and security solutions, making it a key player in the electronics industry. The IRF7473TRPBF itself is a high-speed, low-side MOSFET driver, suitable for driving power MOSFETs and IGBTs in various electronic circuits.

Application

The IRF7473TRPBF is a high-speed MOSFET driver used in various applications, including switching power supplies, motor drives, and inverter circuits. It is suitable for driving gate voltages in power MOSFETs and IGBTs, enhancing efficiency in DC-DC converters, and enabling fast switching in high-frequency applications. Its features support automotive, industrial, and consumer electronics designs, providing reliable performance in demanding environments.

Equivalent

The IRF7473TRPBF is a N-channel MOSFET. Equivalent products include the STP75NF75, FQP75N75, and MTD75N75. Always verify specifications like voltage, current, and RDS(on) to ensure compatibility in your application.

Envío

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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