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IRF7458TRPBF
MOSFET N-CH 30V 14A 8SO
- Fabricante
- Mfr. Parte #IRF7458TRPBF
- Paquete
- Hoja de datos IRF7458TRPBF DataSheet
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Especificaciones
| Supplier | Infineon Technologies |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 14A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V, 16V |
| RdsOn(Max)@IdVgs | 8mOhm @ 14A, 16V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 59 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 2410 pF @ 15 V |
| PowerDissipation(Max) | 2.5W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SO |
Descripción general
Description
Key points:
- Function: Low-voltage, high-current switching transistor with low on-resistance to reduce conduction losses.
- Packaging: TRPBF indicates Pb-free, tape-and-reel packaging; exact package type (and pinout) depends on the lot—check the datasheet for your package.
- Typical use: Gate driven by a suitable gate voltage (Vgs) to switch current through the drain-source path; often used with heat sinking for power applications.
- What to verify in the datasheet: Vds (drain-source voltage), Id (continuous drain current), Rds(on), Qgs/Qgd (gate charge), Vgs(th), switching characteristics, and thermal rating.
For precise electrical specs, pinout, thermal data, and package options, consult the official IR/Infineon datasheet or a distributor datasheet for IRF7458TRPBF.
Features
- Low on-resistance (Rds(on)) for reduced conduction loss
- High drain current capability
- Fast switching with optimized gate charge
- Robust avalanche energy rating for inductive loads
- Trench/gate technology for better performance
- Integrated body diode suitable for switching applications
- Wide operating temperature range
- RoHS compliant, Tape & Reel packaging for automated assembly
Package
Pinout
Function: IRF7458TRPBF is a dual N‑channel enhancement‑mode power MOSFET (two N‑channel FETs in one SO‑8 package) for low‑voltage, high‑current switching applications (synchronous rectification, DC–DC converters, load switching). Each FET has gate, drain and source terminals; the package provides the two FETs and their respective pins (gates, drains, sources) plus common substrate/thermal connections. For exact pin-to-terminal mapping and electrical characteristics, consult the device datasheet.
Manufacturer
Application
- Switching regulators and DC-DC converters (buck/boost/buck-boost)
- VRMs and point-of-load power supplies
- Motor drive and control circuits (BLDC, PMSM)
- Automotive and industrial power electronics (12–48 V)
- Solar inverters and energy-storage systems
- High-side/low-side switching and load-switch circuits
- Power management in consumer electronics and adapters
Envío
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Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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