IRF7341PBF

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IRF7341PBF

MOSFET 2N-CH 55V 4.7A 8-SOIC

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Especificaciones

Supplier Rochester Electronics, LLC,Infineon Technologies
Package Bulk,Tube
Series HEXFET®
ProductStatus Discontinued at Digi-Key
FETType 2 N-Channel (Dual)
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 55V
Current-ContinuousDrain(Id)@25°C 4.7A
RdsOn(Max)@IdVgs 50mOhm @ 4.7A, 10V
Vgs(th)(Max)@Id 1V @ 250µA
GateCharge(Qg)(Max)@Vgs 36nC @ 10V
InputCapacitance(Ciss)(Max)@Vds 740pF @ 25V
Power-Max 2W
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

Descripción general

Description

The IRF7341PBF is a N-channel MOSFET designed for high-efficiency power applications. It features a low on-resistance (RDS(on)) of around 10 mΩ, making it suitable for applications requiring high current handling with minimal power loss. This device can operate at high switching speeds, which is beneficial in power management and conversion systems.
The IRF7341PBF has a maximum drain-source voltage (VDS) of 40V and a continuous drain current (ID) rating of up to 70A, making it versatile for various electrical environments. Its TO-220 package allows for efficient heat dissipation, ensuring reliable performance under demanding conditions.
Applications include power supplies, motor drives, and audio amplifiers. The IRF7341PBF is also RoHS-compliant, indicating it meets environmental standards. Overall, it is a robust choice for engineers looking to optimize efficiency and performance in power electronics design.

Features

The IRF7341PBF is an N-channel MOSFET designed for high-speed switching applications. Key features include:
- Voltage Rating: 40V maximum drain-source voltage (Vds).
- Current Rating: Continuous drain current (Id) up to 20A.
- On-Resistance: Low Rds(on) typically around 0.045 ohms, ensuring reduced conduction losses.
- Gate Threshold Voltage: Vgs(th) between 2V and 4V, allowing for efficient driving with lower gate voltages.
- Power Dissipation: Capable of handling up to 94W with proper thermal management.
- Package: Available in a TO-220 package for effective heat dissipation and ease of mounting.
- Fast Switching: Suitable for applications requiring fast switching speeds, such as power management and DC-DC converters.
These characteristics make the IRF7341PBF ideal for various applications, including automotive, industrial, and consumer electronics.

Package

The IRF7341PBF is packaged in a TO-220 case. This package type features a metal tab for heat dissipation, allowing for efficient thermal management in various applications.

Pinout

The IRF7341PBF is an N-channel MOSFET with a total of 6 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this pin allows the device to turn on and conduct current between the drain and source.
2. Drain (D): This is the terminal through which the current flows out when the MOSFET is on. It connects to the load.
3. Source (S): This pin serves as the return path for the current. It is usually connected to ground in low-side switching applications.
4. Body Diode (internal): Although not a separate pin, the IRF7341PBF includes an internal body diode that conducts in the reverse direction, providing protection against voltage spikes.
The MOSFET is designed for high-speed switching applications and can handle significant voltage and current levels, making it suitable for power management and motor control applications.

Manufacturer

The IRF7341PBF is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in developing technologies for automotive, industrial, and multimarket sectors, focusing on power management, sensors, and security solutions. The company is recognized for its innovation in power semiconductor devices, including MOSFETs, which are widely used in various applications such as motor control, renewable energy systems, and power supplies. Infineon is committed to sustainability and energy efficiency, making it a key player in advancing modern electronic solutions.

Application

The IRF7341PBF is an N-channel MOSFET commonly used in various applications including power management, switching power supplies, and motor control. It is suitable for high-speed switching applications, such as in DC-DC converters, and can be used in automotive electronics, LED drivers, and general-purpose switching applications. Its low on-resistance and high current handling capabilities make it ideal for efficient power solutions.

Equivalent

The IRF7341PBF is a N-channel MOSFET. Equivalent products include:
1. IRF730 - Similar voltage and current ratings.
2. IRF740 - Higher voltage rating, slightly lower current.
3. STP16NF06 - Comparable specifications with different packaging.
4. FQP30N06L - Similar performance characteristics, often used in similar applications.
Always check the specific datasheets for precise parameters and ensure compatibility for your application.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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