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IRF7329TRPBF
MOSFET 2P-CH 12V 9.2A 8SO
- Fabricante
- Mfr. Parte #IRF7329TRPBF
- Paquete
- Hoja de datos IRF7329TRPBF DataSheet
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Especificaciones
| Series | HEXFET® |
| Part Status | Last Time Buy |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 9.2A |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 9.2A, 4.5V |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 57nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 3450pF @ 10V |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Base Product Number | IRF732 |
Descripción general
Description
Key specifications include a maximum drain-source voltage (VDS) of 30V, a continuous drain current (ID) of approximately 50A, and a threshold voltage (VGS(th)) range of 1.0V to 2.0V. The device is characterized by fast switching speeds, making it ideal for high-frequency applications.
Additionally, the IRF7329TRPBF is housed in a TO-220 package, which facilitates easy heat dissipation and robust mounting. This component is also compliant with RoHS standards, ensuring it meets environmental regulations. Overall, the IRF7329TRPBF offers a reliable solution for designers seeking high-performance MOSFETs in compact, energy-efficient circuits.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low to moderate voltage applications.
2. Current Rating: The continuous drain current (I_D) is rated at 62A, allowing it to handle substantial loads.
3. R_DS(on): It boasts a low on-resistance of approximately 0.017Ω, enhancing efficiency by minimizing power loss during operation.
4. Gate Threshold Voltage (V_GS(th)): The gate-source threshold voltage ranges from 2V to 4V, allowing for easy drive with logic-level signals.
5. Package Type: It comes in a TO-220 package, facilitating effective heat dissipation.
6. Fast Switching: The device supports fast switching speeds, making it ideal for applications such as power supplies and motor control.
7. Thermal Resistance: Low thermal resistance ensures better thermal management.
Overall, the IRF7329TRPBF is an efficient, robust choice for various electronic designs.
Package
Pinout
1. Gate (G): Controls the MOSFET's switching; applying a voltage turns the device on.
2. Drain (D): The primary output terminal where the load is connected; current flows from the drain to the source when the MOSFET is on.
3. Source (S): The terminal through which the current exits the device; typically connected to ground in low-side switching applications.
4. Body Diode (internal): Provides a path for current when the MOSFET is off, allowing for reverse current flow.
The IRF7329TRPBF is designed for high efficiency and fast switching applications, making it suitable for power management and motor control circuits.
Manufacturer
Application
Equivalent
Envío
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