IRF730PBF

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IRF730PBF

MOSFET N-CH 400V 5.5A TO220AB

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Especificaciones

Package Tube
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 400 V
Current-ContinuousDrain(Id)@25°C 5.5A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 1Ohm @ 3.3A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 38 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 700 pF @ 25 V
PowerDissipation(Max) 74W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Descripción general

Description

The IRF730PBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. It is part of the International Rectifier's range of power MOSFETs, known for their high efficiency and reliability. The device features a maximum drain-source voltage (V_DS) of 400V, a continuous drain current (I_D) of 9A, and a low on-resistance (R_DS(on)) of approximately 0.55 ohms, making it suitable for various power management applications, including motor control, power supplies, and DC-DC converters.
The IRF730PBF has a fast switching speed, which allows it to operate efficiently in high-frequency applications. It comes in a TO-220 package, which facilitates easy heat dissipation. Its gate threshold voltage ranges from 2V to 4V, allowing for low-voltage drive compatibility. Overall, the IRF730PBF is widely used in both industrial and consumer electronics due to its robustness and performance in handling high-voltage and high-current conditions.

Features

The IRF730PBF is an N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (VDS) of 400V.
2. Current Rating: It supports a continuous drain current (ID) of up to 9A at a temperature of 25°C.
3. On-State Resistance: The typical RDS(on) is 0.55 ohms, minimizing conduction losses.
4. Gate Threshold Voltage: The gate-source threshold voltage (VGS(th)) ranges from 2V to 4V, allowing for efficient switching.
5. Fast Switching Speed: Suitable for high-frequency applications due to its low gate charge.
6. Package: Available in a TO-220 package, making it suitable for heat dissipation.
7. Applications: Commonly used in power supplies, motor drivers, and other high-voltage switching applications.
The IRF730PBF is preferred for its reliability and performance in demanding electronic circuits.

Package

The IRF730PBF is typically available in a TO-220 package type. This package is designed for power devices, providing effective heat dissipation and easy mounting.

Pinout

The IRF730PBF is a N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin controls the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the current enters the MOSFET. The device conducts from the drain to the source when activated by the gate.
3. Source (S): This pin is where the current exits the MOSFET. It is typically connected to the ground in low-side switching applications.
The IRF730PBF is designed for high voltage and can handle up to 400V with a maximum continuous drain current of 9A.

Manufacturer

The IRF730PBF is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer. Infineon specializes in providing semiconductor solutions for various applications, including automotive, industrial electronics, and power management. The company is known for its focus on innovation, energy efficiency, and high-performance components. Infineon Technologies operates in several segments, including automotive, industrial power control, and digital security solutions, and is recognized for its commitment to advancing technology in these areas.

Application

The IRF730PBF is an N-channel MOSFET commonly used in applications such as power management, switching power supplies, motor control, and high-speed switching circuits. Its high voltage and current ratings make it suitable for industrial automation, automotive systems, and audio amplifier power stages. Additionally, it is often utilized in power inverters and renewable energy systems like solar energy converters.

Equivalent

The IRF730PBF is a N-channel MOSFET. Equivalent products include:
1. IRF740
2. IRF830
3. STP20NM60
4. FQP30N60
5. MTP2N60E
Always check the specific ratings and characteristics to ensure compatibility for your application.

Envío

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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