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IRF6727MTRPBF
MOSFET N-CH 30V 32A DIRECTFET
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- Mfr. Parte #IRF6727MTRPBF
- Paquete
- Hoja de datos IRF6727MTRPBF DataSheet
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Especificaciones
| Series | HEXFET® |
| Part Status | Last Time Buy |
| Base Product Number | IRF6727 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta), 180A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 32A, 10V |
| Vgs(th) (Max) @ Id | 2.35V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 74 nC @ 4.5 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6190 pF @ 15 V |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DIRECTFET™ MX |
| Package | DirectFET™ Isometric MX |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Descripción general
Description
Key specifications include a maximum drain-source voltage (V_DS) of 30V, a continuous drain current (I_D) of up to 60A, and a gate threshold voltage (V_GS(th)) typically ranging from 2V to 4V. The device is packaged in a TO-220 format, facilitating easy heat dissipation.
The IRF6727MTRPBF is commonly used in power supplies, motor drivers, and other applications requiring reliable switching performance. It is also RoHS compliant, ensuring it meets environmental regulations regarding hazardous substances. Overall, this MOSFET combines high performance with versatility, making it a popular choice for engineers in the design of modern electronic circuits.
Features
- Voltage Rating: 75 V, making it suitable for various high-voltage applications.
- Continuous Drain Current: Up to 30 A, allowing it to handle significant loads.
- RDS(on): Low on-resistance (typically 0.022 ohms at VGS = 10 V), which minimizes conduction losses and improves thermal performance.
- Gate Threshold Voltage (VGS(th)): Typically ranges from 2V to 4V, enabling efficient switching with low gate drive requirements.
- Power Dissipation: Capable of dissipating up to 94 W, which aids in thermal management.
- Package Type: Available in a TO-220 package, facilitating easy heat sinking and mounting.
These features make the IRF6727MTRPBF ideal for applications in power management, motor control, and automotive systems, ensuring reliability and performance in demanding conditions.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here turns the device on (conducting state) or off (non-conducting state).
2. Drain (D): This pin connects to the load; current flows from the drain when the MOSFET is turned on.
3. Source (S): This pin connects to ground or the negative side of the power supply; it serves as the return path for the current.
4. Tab (Heat Sink): The tab serves as a heat sink and can also be connected to the source for improved thermal management.
5. Body Diode: Although not a pin, the internal body diode facilitates current flow in the reverse direction when the MOSFET is off.
The IRF6727MTRPBF is designed for high efficiency and low on-resistance, making it suitable for various applications in switching power supplies and motor control.
Manufacturer
Application
Equivalent
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