IRF540NSTRRPBF

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IRF540NSTRRPBF

MOSFET N-CH 100V 33A D2PAK

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Especificaciones

Supplier Infineon Technologies
Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Last Time Buy
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 33A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 44mOhm @ 16A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 71 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1960 pF @ 25 V
PowerDissipation(Max) 130W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D2PAK

Descripción general

Description

IRF540NSTRRPBF is an N-channel enhancement-mode power MOSFET from International Rectifier (now Infineon). It’s a 100 V, ~14 A device used for switching and power management in SMPS, motor drivers, and DC-DC converters. Key specs: VDS = 100 V; ID ≈ 14 A; RDS(on) ≈ 0.077 Ω (typ) at VGS = 10 V; gate threshold ~2–4 V. It is not a true logic-level part—drive with about 10 V for low RDS(on); at lower gates, RDS(on) is higher. Package: TO-220AB, Pb-free, Tape & Reel (STRRPBF) for automated assembly. Thermal performance depends on heatsinking; provide adequate cooling for your current. See the datasheet for full electrical characteristics and operating conditions.

Features

Key features of IRF540NSTRRPBF (Pb‑free):
- N-channel enhancement-mode power MOSFET
- Vds = 100 V; Id = 14 A (continuous)
- Rds(on) ≈ 0.077 Ω (max ~0.085 Ω) at Vgs = 10 V
- Gate threshold ~2–4 V (not a true logic-level device; full conduction at ~10 V)
- Fast switching suitable for power conversion and motor-drive use
- Avalanche rugged and suitable for switching transients
- Pb-free, RoHS-compliant package (STRRPBF variant)
- Package: typical power package (TO-220 type) with high-temperature operation
- Operating junction temperature up to 150°C (ambient/thermal limits per datasheet)
Applications: switching power supplies, DC-DC converters, motor control, power switches.

Package

TO-220AB through-hole package (Pb-free/RoHS-compliant).

Pinout

- Pin count: 3 leads (Gate, Drain, Source); the tab is connected to Drain.
- Function: N-channel enhancement-mode power MOSFET used for switching or amplification in high-power circuits. Pinout typically: 1 = Gate, 2 = Drain, 3 = Source.

Manufacturer

Manufacturer: Infineon Technologies AG (the IRF series was originally from International Rectifier, now part of Infineon).
What kind of company: Infineon is a global semiconductor manufacturer specializing in power semiconductors (MOSFETs, IGBTs), microcontrollers, sensors and power-management ICs for automotive, industrial, consumer and communications applications.

Application

IRF540NSTRRPBF is an N-channel enhancement MOSFET (100 V, ~14 A; Rds(on) ~0.04–0.077 Ω at Vgs = 10 V). Common applications:
- Switch-mode power supplies and DC–DC converters
- Motor control (DC/BLDC)
- Power inverters (including solar systems)
- Class D audio amplifier output switches
- High-/low-side switches in power management
- General load switching in up to 100 V systems

Equivalent

Equivalent N-channel 100 V MOSFETs (similar package and specs):
- FDN540N (Fairchild/On Semiconductor)
- SiR540N (Vishay Siliconix)
Notes:
- IRF540NSTRRPBF is the Pb-free version of IRF540N; when substituting, verify Vds, Id, and Rds(on) in the datasheet and match package/pinout. Use a cross-reference tool (e.g., Digi‑Key) for exact equivalents.

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Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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