IRF530PBF

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IRF530PBF

MOSFET N-CH 100V 14A TO220AB

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Especificaciones

Package Tube
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 14A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 160mOhm @ 8.4A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 26 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 670 pF @ 25 V
PowerDissipation(Max) 88W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Descripción general

Description

The IRF530PBF is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power switching applications. It is capable of handling high voltage (up to 100V) and moderate current (up to 9.2A) loads, making it suitable for various electronic applications, including power supplies, motor controllers, and amplifiers.
Key features include a low on-resistance (typically 0.18 ohms), which enhances efficiency by reducing power loss during operation. The IRF530PBF is housed in a TO-220 package, facilitating heat dissipation and easy mounting. It has a gate threshold voltage between 2V and 4V, enabling it to be driven by typical logic levels.
Additionally, the "PBF" in its designation indicates that the component is lead-free, complying with RoHS (Restriction of Hazardous Substances) standards. This makes it a suitable choice for environmentally conscious designs. Overall, the IRF530PBF is widely used in various applications requiring reliable switching and amplification performance.

Features

The IRF530PBF is an N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: Max Drain-Source Voltage (V_DS) of 100V, suitable for medium voltage applications.
2. Continuous Drain Current: Can handle up to 9.2A, enabling it to drive moderate loads.
3. On-Resistance: Low R_DS(on) of approximately 0.18 ohms, leading to reduced power losses when conducting.
4. Gate Threshold Voltage: V_GS(th) typically between 2V and 4V, allowing it to be driven by standard logic levels.
5. Fast Switching Speed: Suitable for applications requiring quick turn-on and turn-off.
6. Package Type: Available in TO-220, making it easy to integrate into various PCB layouts.
7. Thermal Resistance: Good thermal performance, with a maximum junction temperature of 150°C.
These features make the IRF530PBF ideal for power management, motor control, and amplifier circuits.

Package

The IRF530PBF is typically available in a TO-220 package type. This package is designed for easy mounting on heat sinks due to its larger size, allowing for efficient heat dissipation in power applications.

Pinout

The IRF530PBF is an N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, the MOSFET can be turned on (conducting) or off (non-conducting).
2. Drain (D): This is the terminal through which the current flows out when the MOSFET is in the on state. It is connected to the load.
3. Source (S): This pin is the terminal through which the current enters the MOSFET. It is generally connected to ground in low-side switching configurations.
The IRF530PBF is commonly used in switching applications and amplification circuits, featuring a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 9.2A.

Manufacturer

The IRF530PBF is manufactured by Infineon Technologies AG, a global leader in semiconductor solutions. Infineon is known for producing a wide range of products, including power semiconductors, microcontrollers, and automotive electronics. The company focuses on innovation in areas such as energy efficiency, mobility, and security, serving various industries including automotive, industrial, and consumer electronics. Infineon's commitment to technology advancement and sustainability positions it as a prominent player in the semiconductor industry.

Application

The IRF530PBF is an N-channel MOSFET commonly used in power management applications, including motor control, switching power supplies, and DC-DC converters. It is suitable for high-speed switching applications due to its fast switching times and low on-resistance. Additionally, it is used in audio amplifiers, power amplifiers, and other electronic circuits requiring efficient power handling and thermal performance.

Equivalent

Equivalent products for the IRF530PBF include the IRF540, IRFZ40, and STP16NF06. These MOSFETs have similar specifications in terms of voltage and current ratings, but always verify specific parameters such as RDS(on), VGS(th), and package type for compatibility in your application.

Envío

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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