IRF5305

Las imágenes son solo para referencia

IRF5305

MOSFETs MOSFET, P-CHANNEL, -55V, -31A, 60 mOhm, 42 nC Qg, TO-220AB

100% original & Nuevo

24 horas listos para el envío

Garantía de 365 días

RFQ y Obtenga más descuentos

Especificaciones

Descripción general

Description

The IRF5305 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. It features a maximum drain-source voltage (V_DS) of 55V and a continuous drain current (I_D) rating of up to 50A, making it suitable for power management in various electronic circuits. With a low on-resistance (R_DS(on)) of about 0.025 ohms, it ensures efficient conduction with minimal power loss.
The IRF5305 is primarily used in applications such as power supplies, motor control, and DC-DC converters. Its gate threshold voltage (V_GS(th)) ranges from 2 to 4V, allowing it to be driven by standard logic-level signals. The device is housed in a TO-220 package, which aids in effective heat dissipation.
When integrating the IRF5305 into circuits, it is essential to consider thermal management and appropriate gate driving techniques to ensure optimal performance and reliability.

Features

The IRF5305 is an N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: The maximum drain-source voltage (V_DS) is 55V, making it suitable for various applications.
2. Current Rating: It can handle continuous drain current (I_D) up to 33A, allowing it to manage significant loads.
3. Low On-Resistance: It has a low R_DS(on) typically around 0.045Ω at V_GS of 10V, which reduces power losses during operation.
4. Fast Switching Speed: The device can switch on and off rapidly, ideal for high-frequency applications.
5. Thermal Characteristics: It features a wide operating temperature range (-55°C to +170°C) and a TO-220 package for effective heat dissipation.
6. Gate Threshold Voltage: V_GS(th) ranges from 2V to 4V, allowing for easy drive with standard logic levels.
7. Applications: Commonly used in power management, motor control, and DC-DC converters.
These attributes make the IRF5305 versatile for various electronic applications.

Package

The IRF5305 is typically available in a TO-220 package type. This package features a metal tab for heat dissipation and is commonly used for power applications in electronics due to its robustness and thermal management capabilities.

Pinout

The IRF5305 is an N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate terminal turns the device on (allows current to flow from drain to source) or off (blocks current flow).
2. Drain (D): This is the terminal through which the load current flows when the MOSFET is in the on state. It connects to the higher voltage side of the circuit.
3. Source (S): This pin is connected to the ground or lower voltage side of the circuit. Current flows from the drain to the source when the MOSFET is activated.
The IRF5305 is commonly used in power management, switching applications, and as a high-speed switch in various electronic devices due to its efficient performance.

Manufacturer

The IRF5305 is manufactured by International Rectifier, a company that specializes in semiconductor technology. Founded in 1947, International Rectifier is known for its power management solutions, including power MOSFETs, integrated circuits, and other components used in a variety of applications such as automotive, industrial, and consumer electronics. In 2015, the company was acquired by Infineon Technologies, a leading German semiconductor manufacturer. Infineon focuses on providing innovative semiconductor solutions for energy efficiency, mobility, and security in a wide range of applications.

Application

The IRF5305 is an N-channel MOSFET commonly used in power management applications, including DC-DC converters, motor drivers, and power switching applications. Its low on-resistance and high current handling capabilities make it suitable for high-efficiency switching power supplies and inverters. Additionally, it is utilized in audio amplifiers and various automotive and industrial applications where efficient power control is essential.

Equivalent

The IRF5305 is a N-channel MOSFET. Equivalent products include the STP11NK50Z, FQP30N60, and AOD8N60. Always verify specifications like voltage, current ratings, and RDS(on) to ensure compatibility for your specific application.

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

Similar