IRF3205ZSTRLPBF

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IRF3205ZSTRLPBF

IRF3205 - 12V-300V N-CHANNEL POW

  • Fabricante
  • Mfr. Parte #IRF3205ZSTRLPBF
  • Paquete TO-263-3
  • Hoja de datos
  • En stock7133

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Especificaciones

Package Bulk
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 55 V
Current-ContinuousDrain(Id)@25°C 75A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 6.5mOhm @ 66A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 110 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 3450 pF @ 25 V
PowerDissipation(Max) 170W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D2PAK

Descripción general

Description

The IRF3205ZSTRLPBF is a N-channel MOSFET designed for high-efficiency power applications. It features a low on-resistance (R_DS(on)) of approximately 8 mΩ, enabling minimal power loss during operation. With a maximum drain-source voltage (V_DS) of 55V and a continuous drain current (I_D) rating of 110A, it is suitable for various applications, including power management, motor control, and DC-DC converters.
This MOSFET is characterized by fast switching speeds, which contribute to improved performance in high-frequency applications. It also has a low gate threshold voltage (V_GS(th)), making it compatible with low-voltage drive circuits. The package type is typically a TO-220 or similar, facilitating effective thermal management.
The "ZSTRLPBF" designation indicates it is a part of the RoHS-compliant series, ensuring it adheres to environmental regulations. Overall, the IRF3205ZSTRLPBF is a versatile component ideal for enhancing the efficiency and performance of power electronic systems.

Features

The IRF3205ZSTRLPBF is a N-channel MOSFET known for its high efficiency and robust performance in power applications. Key features include:
- Voltage Rating: Maximum drain-to-source voltage (V_DS) of 55V.
- Current Rating: Continuous drain current (I_D) of up to 110A, making it suitable for high-power applications.
- R_DS(on): Low on-resistance of approximately 8 mΩ at V_GS = 10V, which minimizes conduction losses.
- Gate Threshold Voltage (V_GS(th)): Typically between 2V to 4V, allowing for easy drive with logic-level signals.
- Package: Available in a TO-220 package for effective heat dissipation.
- Fast switching speeds: Improved efficiency in high-frequency applications.
These features make the IRF3205ZSTRLPBF ideal for use in applications such as DC-DC converters, motor drives, and other power management systems.

Package

The IRF3205ZSTRLPBF is packaged in a TO-220 form factor, which is a widely used package for power MOSFETs. It features three leads and is designed for enhanced heat dissipation, making it suitable for high-power applications.

Pinout

The IRF3205ZSTRLPBF is a N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin controls the MOSFET and is used to turn it on or off. A positive voltage applied to the gate relative to the source allows current to flow from the drain to the source.
2. Drain (D): This pin is connected to the load. When the MOSFET is turned on, current flows from this pin to the source.
3. Source (S): This pin is connected to the ground or the lower potential in the circuit. It serves as the return path for the current flowing through the load.
The IRF3205ZSTRLPBF is known for its low on-resistance and high current handling capability, making it suitable for applications such as power management and motor control.

Manufacturer

The IRF3205ZSTRLPBF is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon is known for its focus on power semiconductors, microcontrollers, and sensors, catering to various industries including automotive, industrial, and consumer electronics. The company specializes in products that enhance energy efficiency and improve system performance, making it a key player in the semiconductor industry.

Application

The IRF3205ZSTRLPBF is a N-channel MOSFET primarily used in power applications such as DC-DC converters, motor drivers, and power management systems. Its high current handling and low on-resistance make it suitable for use in energy-efficient designs, including solar inverters, battery chargers, and electric vehicles. Additionally, it can be used in switching power supplies and high-frequency applications due to its fast switching capabilities.

Equivalent

The IRF3205ZSTRLPBF is a N-channel MOSFET. Equivalent products include:
1. STP75NF75 (STMicroelectronics)
2. FQD18N50 (Fairchild)
3. BSS138 (Nexperia, for lower power applications)
4. AOD 605 (Alpha & Omega Semiconductor)
Always verify specifications like voltage, current, and RDS(on) for compatibility in your application.

Envío

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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