IRF200P222

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IRF200P222

MOSFET N-CH 200V 182A TO247AC

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Especificaciones

Package Tube
Series StrongIRFET™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 200 V
Current-ContinuousDrain(Id)@25°C 182A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 6.6mOhm @ 82A, 10V
Vgs(th)(Max)@Id 4V @ 270µA
GateCharge(Qg)(Max)@Vgs 203 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 9820 pF @ 50 V
PowerDissipation(Max) 556W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247AC

Descripción general

Description

The IRF200P222 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power management applications. It features a low on-resistance (R_DS(on)), making it efficient for switching applications, which minimizes power loss and heat generation. With a maximum drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of 22A, it is suitable for high-voltage and high-current applications.
The device is characterized by fast switching speeds and robust thermal performance, which makes it ideal for use in power supplies, motor controls, and automotive applications. It typically comes in TO-220 or similar packages for efficient heat dissipation. The IRF200P222 is favored in designs where reliability and efficiency are critical, contributing to improved system performance and longevity.
For design considerations, it's essential to review the absolute maximum ratings and thermal characteristics in the datasheet to ensure proper integration into circuits.

Features

The IRF200P222 is a high-performance N-channel MOSFET designed for power switching applications. Key features include:
1. Voltage Rating: 200V, allowing it to handle high-voltage applications.
2. Continuous Drain Current: Rated at 200A, it can efficiently conduct high current loads.
3. Low RDS(on): Offers low on-resistance (typically around 0.08 ohms), which reduces power losses during operation.
4. Fast Switching Speed: Enhanced switching characteristics facilitate efficient operation in high-frequency applications.
5. Thermal Performance: Equipped with a robust thermal package, it can dissipate heat effectively, ensuring reliability in demanding environments.
6. Gate Threshold Voltage: Typically between 2V to 4V, making it compatible with standard drive voltages.
7. Package Type: Available in a TO-220 package, which provides good thermal performance and ease of mounting.
These features make the IRF200P222 suitable for various applications such as motor control, power supplies, and DC-DC converters.

Package

The IRF200P222 is typically available in a TO-220 package type. This package features a metal tab for heat dissipation and is commonly used for power MOSFETs, providing good thermal performance and ease of mounting on heatsinks.

Pinout

The IRF200P222 is a high-voltage N-channel MOSFET with a total of 4 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D): The drain pin is where the current enters the MOSFET when it is in the on state.
3. Source (S): The source pin is where the current exits the MOSFET. In N-channel MOSFETs, this is typically connected to the ground or the lower potential of the circuit.
4. Body Diode (not a pin, but an internal feature): The IRF200P222 includes a body diode that allows current to flow in the reverse direction when the MOSFET is off, providing additional functionality in certain applications.
This MOSFET is designed for high-speed switching and is commonly used in power management applications.

Manufacturer

The IRF200P222 is manufactured by Infineon Technologies AG, a prominent semiconductor company. Infineon, based in Germany, specializes in semiconductor solutions for various applications, including automotive, industrial power control, and security technologies. The company is known for its innovation in power management and efficiency, providing components such as transistors, diodes, and integrated circuits. Infineon focuses on enhancing energy efficiency and sustainability in its products, catering to a global market and serving various industries.

Application

The IRF200P222 is a power MOSFET widely used in various applications, including:
1. Power Management: Switching regulators and DC-DC converters.
2. Motor Control: Drives for DC and stepper motors.
3. Lighting: LED drivers and dimmers.
4. Consumer Electronics: Power supplies and battery chargers.
5. Automotive: Electric vehicle systems and power distribution.
Its high voltage and current handling capabilities make it suitable for these areas.

Equivalent

The IRF200P222 is a N-channel MOSFET. Equivalent products include the IRF240, IRF250, and STP16NF06. Check specifications for specific applications, as voltage and current ratings may vary. Always consult the datasheet for detailed comparisons.

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